Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations

Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations

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Article title:

Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations

Published by:

Ishaq Ahmad;M. Madhuku;Adeela Sadaf;Shakil Khan;Javaid Hussain;Awais Ali;D. Wan;S.Z. Ilyas;G. Mola;Abdul Waheed;Muhammad Asim Rasheed.

a National Center for Physics, Quaid-i-Azam University, Islamabad 44000, Pakistan
b iThemba LABS, National Research Foundation, P. Bag X11 WITS 2050, South Africa
c Physics Department, Allama Iqbal Open University, Islamabad, Pakistan
d Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering & Applied Sciences (PIEAS), Islamabad 45650, Pakistan
e Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan
f School of Materials Science and Engineering, Shanghai University, Shanghai, China
g School Chemistry & Physics, University of Kwazulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209, South Africa
h Department of Physics, Islamia College Peshawar (Public sector University), Pakistan

Picture of  InGaN/GaN Wafer:








In this study, the influence of Si ions irradiations (12 MeV energetic) on structural and optical characteristics of InGaN/GaN thin film has been investigated. Irradiation was performed at different Si ions fluences in the range of 1×1013 to 1×1015 ions/cm2. X-ray diffraction (XRD) pattern of pristine film indicates only the (0 0 2) oriented crystallites of InGaN while the irradiated films patterns showed other phases (InN and GaN) as well. Ion irradiations at different dose rates have shown no or negligible effect on grain size of InGaN except a shift in the peak position which demonstrates the development of tensile stresses. The existence of other phases in the irradiated films patterns is the indication of InGaN phase separation. Defects produced due to irradiation were also confirmed from peak shifting and appearance of new peak at 669 cm−1 in Raman spectra. A decrease in optical bandgap with the increase of ion irradiation dose rate is being reported in this work.

Subject(s): A. SemiconductorA. Thin filmsB. Ions irradiationsC. X-ray diffractionD. Raman spectroscopy.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… Ion beam irradiation induced change in the optical bandgap was also studied. 2. Experimental
details. InGaN/GaN thin film grown on sapphire substrate has been used in this research work.
It was purchased from Xiamen Powerway Advanced Material Co., Ltd., China …”



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