Nitride Semiconductor Wafer
Free-standing Gallium Nitride Item No. Type Orientation Thickness Grade Micro Defect Density Surface Usable area N-Type PAM-FS-GaN50-N 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-N dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-N dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN38-N dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN25-N dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN15-N 14mm*15mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN10-N 10mm*10.5mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN5-N 5mm*5.5mm, N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% SEMI-INSULATING PAM-FS-GaN50-SI 2″ N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN45-SI dia.45mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN40-SI dia.40mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN38-SI dia.38mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or P/L >90% PAM-FS-GaN25-SI dia.25.4mm,N type 0°±0.5° 300±25um A/B 0/<2/cm2 P/P or [...]