YAG Crystals-3

YAG Crystals-3

PAM XIAMEN offers Yb YAG Ytterbium (Yb) doped Yttrium Aluminium Garnet Laser Crystal.

Ytterbium – Yb:YAG is a very promising laser crystal and is more suitable for diode-pumping than the commonly used Nd-doped YAG crystals. Compared with the traditional Nd:YAG crystal, Yb:YAG crystal has a much wider absorption bandwidth to reduce thermal management of diode lasers. Yb:YAG emits typically at either 1030 nm (strongest line) or 1050 nm (ytterbium-doped gain media).  It is often used in powerful and efficient thin-disk lasers. Yb:YAG yttrium aluminium garnet crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.

Crystal structure: Cubic
Lattice parameters: 12.01 Å
Melt point: 1970 °C
Hardness (mohs): 8.5
Density: 4.56±0.04 g/cm3
Specific heat: 0.59 J/g.cm3
Young modulus: 3.17X10^4 Kg/mm2
Tensile strength: 0.13~0.26 GPa

Thermal expansion
<100> Direction: 8.2×10-6 /°C (0~250°C )
<110> Direction: 7.7×10-6 /°C (0~250°C )
<111> Direction: 7.8×10-6 /°C (0~250°C )
10.5 W/m/K (@100°C)

Thermo-optical coefficient: 7.3×10-6 /°C

Publications related to YAG laser crystals

[1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser with 60 W of output at 1645 nm”, Opt. Lett. 31 (6), 754 (2006)
[3] J. W. Kim et al., “Fiber-laser-pumped Er:YAG lasers”, IEEE Sel. Top. Quantum Electron. 15 (2), 361 (2009)
[4] Li Chaoyang et al., “106.5 W high beam quality diode-side-pumped Nd:YAG laser at 1123 nm”, Opt. Express 18 (8), 7923 (2010)
[5] X. Délen et al., “34 W continuous wave Nd:YAG single crystal fiber laser emitting at 946 nm”, Appl. Phys. B 104 (1), 1 (2011)
[6] H. C. Lee et al., “Diode-pumped continuous-wave eye-safe Nd:YAG laser at 1415 nm”, Opt. Lett. 37 (7), 1160 (2012)

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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