Bookmark and Share
Home > News > AlGaInP LED Chip Sepcification

 

AlGaInP LED Chip Sepcification

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

· Orange LED Wafer Substrate:

 

 

 

 

 

 

 

 

 

 

P+GaAs

 

 

 

 

 

 

 

 

p-GaP

 

 

 

 

 

 

 

 

p-AlGaInP

 

 

 

 

 

 

 

 

MQW

 

 

 

 

 

 

 

 

n-AlGaInP

 

 

 

 

 

 

 

 

DBR n-ALGaAs/AlAs

 

 

 

 

 

 

 

Buffer

 

 

 

 

 

 

 

 

GaAs substrate

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

·Chip Sepcification (Base on 7mil*7mil chips)

 

 

 

 

Parameter

 

 

 

 

 

 

 

 

Chip Size

7mil(±1mil)*7mil(±1mil)

 

 

 

 

 

Thickness

7mil(±1mil)

 

 

 

 

 

 

P Electrode

U/L

 

 

 

 

 

 

 

N Electrode

AU

 

 

 

 

 

 

 

Structure

Such as right-shown

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

·Optical-elctric characters

 

 

 

 

 

 

Parameter

Condition

Min.

Typ

Max.

Unit

 

 

 

Forward voltage

If=10μA

1.35

V

 

 

 

Reverse voltage

If=20mA

2.2

V

 

 

 

Reverse current

V=10V

2

μm

 

 

 

Wavelength

If=20mA

565

575

nm

 

 

 

Half wave width

If=20mA

10

nm

 

 

 

 

 

 

 

 

 

 

 

 

·Light intensity characters

 

 

 

 

 

 

Brightness code

LA

LB

LC

LD

LE

LF

LG

LH

IV(mcd)

10-15

15-20

20-25

25-30

30-35

35-40

40-50

50-60

 

Source:PAM-XIAMEN

 

If you need more information about AlGaInP LED Chip Sepcification, please visit our website:http://www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com