Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes!
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes!
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand? A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin [...]
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible? A:Yes, it is no problem, some clients bought our wafers for LLO.
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