PAM XIAMEN offers 1″ silicon wafers.

If you don’t see what you need, pleaes email us your specs and quantity.

Item | Dia | Thickness (um) | Orientation | Type | Dopant | Resistivity (Ohm-cm) |
Polish | Remark |

PAM1901 | 25.4mm | 20000um | <111> | P | B | >1000 | DSP | FZ |

PAM1902 | 25.4mm | 400um | <100> | P | B | ANY | SSP | Thickness is: 400+/-100um. |

PAM1903 | 25.4mm | 500um | <100> | ANY | SSP | Wafers have particles. Wafers sold “As-Is”. | ||

PAM1904 | 25.4mm | 280um | <111> | Undoped | Undoped | >2000 | SSP | Intrinsic FZ |

PAM1905 | 25.4mm | 73.5um | <100> | Undoped | Undoped | >5000 | DSP | FZ, Float Zone |

PAM1906 | 25.4mm | 500um | <100> | P | B | .01-.05 | DSP | NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. |

Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |

PAM1907 | p-type Si:B | [100] | 1″ | 280um | P/E | 0-100 ohm-cm | SEMI, 1Flat, Soft cst |

PAM1908 | Intrinsic Si:- | [111] | 1″ | 280um | P/E | FZ >2000 ohm-cm | Test Grade |

PAM1909 | p-type Si:B | [100] | 1″ | P/E | ANY | Test Grade | |

PAM1910 | n-type Si:P | [100] | 1″ | 475 ±10 | E/E | FZ >500 {1,900–2,400} | NO Flats, Soft cst |

PAM1911 | n-type Si:P | [111] ±0.5° | 1″ | 280 | P/P | FZ 2,000–10,000 | NO Flats, TTV<5μm, Soft cst |

PAM1912 | Intrinsic Si:- | [100] | 1″ | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |

PAM1913 | Intrinsic Si:- | [100] | 1″ | 160 | P/P | FZ >10,000 | Prime, NO Flats, hard cst, TTV<8μm |

PAM1914 | Intrinsic Si:- | [100] | 1″ | 160 | P/P | FZ >10,000 | Prime, NO Flats, hard cst, TTV<8μm |

PAM1915 | Intrinsic Si:- | [111] ±0.5° | 1″ | 500 | P/P | FZ >17,500 | SEMI Prime, 1Flat, hard cst |

PAM1916 | Intrinsic Si:- | [111] ±0.5° | 1″ | 500 | P/P | FZ >15,000 | SEMI Prime, 1Flat, hard cst |

PAM1917 | Intrinsic Si:- | [111] ±0.5° | 1″ | 1000 | P/E | FZ 14,000–30,000 | NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers |

PAM1918 | Intrinsic Si:- | [111] ±2° | 1″ | 27870 | C/C | FZ >10,000 | Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm |

PAM1919 | p-type Si:B | [510] | 1″ | 1000 | P/E | 1–100 {7.4–7.4} | NO Flats, Soft cst |

PAM1920 | p-type Si:B | [100] | 1″ | 100 ±15 | P/P | 1–10 | Prime, NO Flats, in sealed bags of 5 wafers. |

PAM1921 | p-type Si:B | [100] | 24mm | 300 | P/E | 1–100 | Prime, NO Flats, hard cst |

PAM1922 | p-type Si:B | [100] | 24.3mm | 300 | P/E | 1–10 | Prime, NO Flats, hard cst |

PAM1923 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 {2.8–2.9} | SEMI Prime, 1Flat, Soft cst |

PAM1924 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 | Prime, NO Flats, Soft cst |

PAM1925 | p-type Si:B | [100] | 24.3mm | 300 | P/E | 1–10 {1.5–1.7} | Prime, NO Flats, hard cst |

PAM1926 | p-type Si:B | [100] | 1″ | 525 ±10 | P/E | 1–30 | Prime, NO Flats, Soft cst, TTV<5μm, Cassettes of 20 and 8 wafers |

PAM1927 | p-type Si:B | [100] | 1″ | 1000 | P/E | 1–30 | SEMI Prime, 1Flat, hard cst |

PAM1928 | p-type Si:B | [100] | 1″ | 3000 | P/E | 1–50 | Prime, NO Flats, Individual cst, Group of 13 wafers |

PAM1929 | p-type Si:B | [100] | 1″ | 275 | P/P | 0.015–0.020 | SEMI Prime, 1Flat, hard cst |

PAM1930 | p-type Si:B | [100] | 1″ | 275 | P/E | 0.015–0.020 | SEMI Prime, 1Flat, Soft cst |

PAM1931 | p-type Si:B | [111] ±0.5° | 1″ | 50 ±10 | P/P | 1–100 | NO Flats, Soft cst |

PAM1932 | n-type Si:P | [100] | 1″ | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 4 wafers |

PAM1933 | n-type Si:P | [100] | 1″ | 280 | P/E | 1–5 | SEMI, 1Flat, hard cst |

PAM1934 | n-type Si:P | [100] | 1″ | 1500 | P/E | 1–20 | Prime, NO Flats, Soft cst |

PAM1935 | n-type Si:P | [111] | 1″ | 330 | P/E | FZ >90 | Prime, NO Flats, hard cst |

PAM1936 | p-type Si:B | [100] | 1″ | 775 | P/E | 8–12 | SEMI Prime, 1Flat, Soft cst |

PAM1937 | p-type Si:B | [100] | 1″ | 300 | P/P | 4–6 | SEMI Prime, 1Flat, hard cst |

PAM1938 | p-type Si:B | [100] | 24mm | 300 | P/E | 1–100 | Prime, NO Flats, Soft cst |

PAM1939 | p-type Si:B | [100] | 1″ | 300 | P/E | 1–10 | Prime, NO Flats, Soft cst |

PAM1940 | p-type Si:B | [100] | 1″ | 500 | P/E | 1–10 | Ile zostalo ? |

PAM1941 | p-type Si:B | [100] | 1″ | 380 | P/E | 0.003–0.005 | SEMI Prime, 1Flat, hard cst |

PAM1942 | p-type Si:B | [100] | 1″ | 275 | P/E | 0.002–0.005 | Prime, NO Flats, hard cst |

PAM1943 | n-type Si:P | [100] | 1″ | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers |

PAM1944 | n-type Si:P | [100] | 1″ | 3500 | P/E | 1.2–3.0 | SEMI Prime, 2Flats, Individual cst |

PAM1945 | n-type Si:P | [100] | 1″ | 300 | P/E | 1–20 | SEMI Prime, 1Flat, hard cst |

PAM1946 | n-type Si:As | [100] | 1″ | 300 | P/P | 0.001–0.005 | Prime, NO Flats, hard cst |

PAM1947 | n-type Si:As | [111] | 1″ | 380 | P/E | 0.002–0.007 | SEMI Prime, 1Flat, hard cst |

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,

to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.