1″ silicon wafers

1″ silicon wafers

PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.

Item Dia Thickness (um) Orientation Type Dopant Resistivity
(Ohm-cm)		 Polish Remark
PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ
PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um.
PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”.
PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ
PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone
PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.

 

Item Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst
PAM1908 Intrinsic Si:- [111] 1″ 280um P/E FZ >2000 ohm-cm Test Grade
PAM1909 p-type Si:B [100] 1″ P/E ANY Test Grade
PAM1910 n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900–2,400} NO Flats, Soft cst
PAM1911 n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000–10,000 NO Flats, TTV<5μm, Soft cst
PAM1912 Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime, 1Flat, hard cst
PAM1913 Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, NO Flats, hard cst, TTV<8μm
PAM1914 Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, NO Flats, hard cst, TTV<8μm
PAM1915 Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >17,500 SEMI Prime, 1Flat, hard cst
PAM1916 Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime, 1Flat, hard cst
PAM1917 Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000–30,000 NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers
PAM1918 Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
PAM1919 p-type Si:B [510] 1″ 1000 P/E 1–100 {7.4–7.4} NO Flats, Soft cst
PAM1920 p-type Si:B [100] 1″ 100 ±15 P/P 1–10 Prime, NO Flats, in sealed bags of 5 wafers.
PAM1921 p-type Si:B [100] 24mm 300 P/E 1–100 Prime, NO Flats, hard cst
PAM1922 p-type Si:B [100] 24.3mm 300 P/E 1–10 Prime, NO Flats, hard cst
PAM1923 p-type Si:B [100] 1″ 300 P/E 1–10 {2.8–2.9} SEMI Prime, 1Flat, Soft cst
PAM1924 p-type Si:B [100] 1″ 300 P/E 1–10 Prime, NO Flats, Soft cst
PAM1925 p-type Si:B [100] 24.3mm 300 P/E 1–10 {1.5–1.7} Prime, NO Flats, hard cst
PAM1926 p-type Si:B [100] 1″ 525 ±10 P/E 1–30 Prime, NO Flats, Soft cst, TTV<5μm, Cassettes of 20 and 8 wafers
PAM1927 p-type Si:B [100] 1″ 1000 P/E 1–30 SEMI Prime, 1Flat, hard cst
PAM1928 p-type Si:B [100] 1″ 3000 P/E 1–50 Prime, NO Flats, Individual cst, Group of 13 wafers
PAM1929 p-type Si:B [100] 1″ 275 P/P 0.015–0.020 SEMI Prime, 1Flat, hard cst
PAM1930 p-type Si:B [100] 1″ 275 P/E 0.015–0.020 SEMI Prime, 1Flat, Soft cst
PAM1931 p-type Si:B [111] ±0.5° 1″ 50 ±10 P/P 1–100 NO Flats, Soft cst
PAM1932 n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 4 wafers
PAM1933 n-type Si:P [100] 1″ 280 P/E 1–5 SEMI, 1Flat, hard cst
PAM1934 n-type Si:P [100] 1″ 1500 P/E 1–20 Prime, NO Flats, Soft cst
PAM1935 n-type Si:P [111] 1″ 330 P/E FZ >90 Prime, NO Flats, hard cst
PAM1936 p-type Si:B [100] 1″ 775 P/E 8–12 SEMI Prime, 1Flat, Soft cst
PAM1937 p-type Si:B [100] 1″ 300 P/P 4–6 SEMI Prime, 1Flat, hard cst
PAM1938 p-type Si:B [100] 24mm 300 P/E 1–100 Prime, NO Flats, Soft cst
PAM1939 p-type Si:B [100] 1″ 300 P/E 1–10 Prime, NO Flats, Soft cst
PAM1940 p-type Si:B [100] 1″ 500 P/E 1–10 Ile zostalo ?
PAM1941 p-type Si:B [100] 1″ 380 P/E 0.003–0.005 SEMI Prime, 1Flat, hard cst
PAM1942 p-type Si:B [100] 1″ 275 P/E 0.002–0.005 Prime, NO Flats, hard cst
PAM1943 n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean–room sheets, MOQ 5 wafers
PAM1944 n-type Si:P [100] 1″ 3500 P/E 1.2–3.0 SEMI Prime, 2Flats, Individual cst
PAM1945 n-type Si:P [100] 1″ 300 P/E 1–20 SEMI Prime, 1Flat, hard cst
PAM1946 n-type Si:As [100] 1″ 300 P/P 0.001–0.005 Prime, NO Flats, hard cst
PAM1947 n-type Si:As [111] 1″ 380 P/E 0.002–0.007 SEMI Prime, 1Flat, hard cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.  PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.  PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-02-21

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