Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness

Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness

An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μτ)_e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μτ)_e value were enhanced about 300% and 88%, respectively.

Fig. 1. IR images of as-grown and annealed CZT:In crystals with different thickness: (a) 2 mm; (b) 5 mm. The size of each pixel is 504×347 μm².

Source: sciencedirect

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2013-11-26 CdZnTe:In, IR transmittance, Resistivity, Te inclusions

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