

Calcite for sale is a negative uniaxial crystal that has high birefringence, wide spectral transmission and availability in reasonably sized rhombs. It’s good material used as visible and near IR polarizers and retardation plate. CaCO3 is the chemical formula for the mineral. PAM XIAMEN [...]
Formation of InAs quantum dots on low-temperature GaAs epi-layer InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs [...]
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates. Main Parameters Crystal structure M4 Growth method Czochralski method Unit cell constant a=3.756Å c=12.63 Å Melt point(℃) 1650 Density 5.92(g/cm3) Hardness 6-6.5(mohs) Dielectric constants ε=16.8 Size 10×3,10×5,10×10,15×15,20×15,20×20 Ф15, [...]
This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor’s length and width. Piezoresistors [...]
PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices. 1. GaN on SiC HEMT Wafer for RF Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility 1300~2200 cm2v-1s-1 XRD(102)FWHM – XRD(002)FWHM – Sheet Resistivity 200~450 ohm/sq AFM [...]
Chamfer is to grind away the sharp edges and corners around the wafer. Its purpose is to make the mechanical strength of the wafer bigger prevent the wafer edge from cracking, to prevent damage caused by thermal stress, and to increase the flatness of [...]