2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 905nm laser diode wafers. 1. Specs of 905nm Laser Diode Wafer 1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS Layer Composition Thickness Concentration 13 P+ GaAs / / 12 P-AlGaAs cladding + waveguide d~1.6um / 11 Undoped GaInAs QW PL:880~900nm / / 10 N- AlGaAs cladding + waveguide / 9 N++ GaAs/P++ GaAs Tunnel junction / / 8 P- AlGaAs cladding + waveguide / 7 Undoped GaInAs QW PL：880~900nm / / 6 N- AlGaAs cladding [...]
High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 280 P/E 0.5-0.6 Prime, NO Flats p-type Si:B [100] 2″ 280 P/E 0.08-0.10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 0.073-0.090 SEMI Prime, p-type Si:B [100] 2″ 250 P/P 0.02-0.04 SEMI Prime p-type Si:B [100] 2″ 225 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 1000 P/P 0.015-0.045 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 0.008-0.095 SEMI Prime p-type Si:B [100-4°] 2″ 300 P/P 0.003-0.004 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 300 P/E 0.0026-0.0029 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.0023-0.0029 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.001-0.006 SEMI Prime, p-type Si:B [100-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 280 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 Prime, NO Flats p-type Si:B [100] 2″ 500 P/P 0.001-0.005 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 300 P/E 20-25 SEMI Prime p-type Si:B [111] 2″ 380 P/P 10-20 SEMI Prime p-type Si:B [111-2° towards[112]] 2″ 1000 P/P 10-30 SEMI Prime p-type Si:B [111] 2″ 500 P/P 2.4-2.6 SEMI Prime p-type [...]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). R-Plane (1-102) Square Al2O3(11-02) substrate Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), [...]
