2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Prime, TTV<1μm n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 SEMI Test, Wafers can be polished for additional fee n-type Si:P [111] 4″ 1200 P/P 35-85 SEMI Prime n-type Si:P [111] ±0.5° 4″ 1500 P/E >20 {24-29} SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers n-type Si:P [111] ±0.5° 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, Both-sides Epi Ready polished n-type Si:P [111] 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 280 P/E 1.3-2.7 SEMI Prime n-type [...]
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation Highlights •High-quality InSb was grown on GaAs by MBE using a “buffer-free” method. •The strain energy is relieved by interfacial misfit dislocations observed by TEM. •The type and separation of dislocations are [...]
AlGaN template structure report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2797 p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst PAM2798 p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst PAM2799 p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E FZ [...]
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate: 1. Specification of Undoped Freestanding GaN Wafer Item PAM-FS-GaN-50-U Dimension 10 x 10.5 mm2 Thickness 380+/-50um Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5x 106 cm-2 (calculated by CL)* Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room 2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
We can offer 2″ InP/InGaAs/InP epi wafer as follows: InP Substrate: Indium Phosphide wafers, P/E 2″dia×350+/-25um, n-type InP:S (100)+/-0.5°, EDP<1E4/cm2. One-side-polished, back-side matte etched, SEMI Flats. EPI layer : Epi 1: InGaAs:(100) Thickness:100nm, etching stop layer Epi 2: InP:(100) Thickness:50nm, bonding layer Source: PAM-XIAMEN If you need more information about InP/InGaAs/InP epi wafer , please visit [...]
