2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
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PAM XIAMEN offers Nickel Single crystal.tomic number: 28 Atomic number: 28 Atomic mass: 58.71 g.mol -1 Atomic mass: 58.71 g.mol -1Crystal structure: F.C.C Crystal structure: F.C.CLattice Constant: 0.325 nm Lattice Constant: 0.325 nm Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x [...]
Silicon Carbide Circuits on the Way Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers Pyrolytic Graphite Substrate. Pyrolytic Graphite is a unique form of graphite manufactured by decomposition of a hydrocarbon gas at very high temperature in a vacuum furnace. It is nucleated on substrate and grown with texture along C axis . The result is an [...]
PAM XIAMEN offers 3″ Diameter Wafer. 3″ Diameter Wafer Ge Wafer Undoped (100) 3″ dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (100) 3″ dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Ge Wafer Undoped (110) 3″ [...]
150mm Germanium Substrate and ingot Xiamen Powerway Advanced Material Co.,Ltd., offers monocrystal or polycrystalline150mm Germanium Substrate and ingots for Optical application or for epi-growth in microelectronics, please see below detail specification: No.1:Germanium Substrate, undoped Prime Grade PAM-190725-GE Diameter: 6”dia. Intrinsic undoped Ge, (100) or (111)+/-0.5deg. Resistivity>30 Ohm.cm, Thickness:500±25µm, SEMI Standard TTV<5µm Both-sides-polished, Sealed in [...]
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline). General Properties for Molybdenum Symbol Mo Atomic Number 42 Atomic Weight: 95.96 g/mol Crystal structure: BCC Lattice constant at room temperature : 0.315 nm Density: 10.28 g/cm3 Melting Point: 2623 °C Boiling Point: 4639 °C Mo Polycrystalline Substrate: [...]
