2″ FZ Si wafer with SSP

PAM XIAMEN offers 2″ FZ Si wafer with SSP

2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-06-15

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19meta-author

8″CZ Prime Silicon Wafer

PAM XIAMEN offers 8″CZ Prime Silicon Wafer 8 inch prime silicon wafer Orientation CZ <111> Diameter 200mm Thickness 1±0.025mm Total Thickness Variation ≤25μm Warp ≤50μm Surface Sigle -side Polished P type Resistivity 1-80Ωcm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-06-10meta-author

4 Inch SiC Epi Wafer

As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices [...]

2021-05-17meta-author

CZT Compton Imaging Detector

PAM-PA03 series are pixel electrode structured detectors based on CZT crystal. 1. CZT Compton Imaging Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistivity >1010Ω.cm Dimension 22.0×22.0 mm2 Thickness 15.0mm Pixel size 1.38×1.38 mm2 Pixel center space 1.88mm Pixel array 11×11 Electrode material Au Operation temperature 25℃-+40℃ Energy range 60KeV~2.6MeV Energy resolution(22℃) Average pixel <5%@662KeV Storage temperture 10℃~40℃ Storage humidity 20%-80% 2. Spectrum of CZT Compton Imager 3. Features Compton Imaging Detector Based on CZT Crystal Long-time stability High energy [...]

2019-04-24meta-author

Single crystal GaTe Substrate

PAM XIAMEN offers Single crystal GaTe Substrate. Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]

2019-04-22meta-author

Single-emitter LD Chip 905nm @25W

PAM XIAMEN offers Single-emitter LD Chip 905nm @25W. Brand: PAM-XIAMEN Wavelength: 905nm Stripe width: 84um Output Power: 25W Cavity Length:0.75mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-05-09meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

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CdZnTe (CZT) Wafer

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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

2″ FZ Si wafer with SSP

2″ FZ Si wafer with SSP

PAM XIAMEN offers 2″ FZ Si wafer with SSP

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