PAM XIAMEN offers 2″ FZ Si wafer with SSP
2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
Sony and Apple’s Micro-LED Display Market Strategy Sony and Apple are the key to promoting micro-LED displays on the market, but the two have diverged in display developments. The Japanese company is making large micro-LED displays, and Apple small displays, but why have both chosen micro-LEDs? [...]
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
PAM XIAMEN offers GaN Template on Sapphire. Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride [...]
(LT-GaAs)Experimental Results PAM XIAMEN offers Low Temperature GaAs. Preparation for pump & probe measurement Reflectance spectra measurement ： we could not observe the reflectance peak. PL spectra measurement ： PL spectra were observed between 810 and 845 nm. Pump & probe measurement (10 K) ・We have observed 0.6-1.6 picosecond decay [...]
