2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows: Wikipedia: Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice [...]
The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks This paper studies the effect of anisotropy on the response of an R -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the [...]
Ga2O3l-ß Crystal Substrate PAM XIAMEN offers Ga2O3l-ß Crystal Substrate. Ga2O3-ß Single Crystal Substrate, <010>+/-1° ori, 1″x0.35mm, 2SP, Research grade with “Twin” Substrate Specifications: Chmistry: ß-Ga2O3 Structure: [...]
PAM XIAMEN offers SOI Wafer ( Si On Insulator). SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) SOI Wafer: 6″, 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) For more information, please visit [...]
A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were [...]
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]
