Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Highlights • The temperature-dependent strengths of CVD ZnS were obtained. • The thermal shock behavior of infrared window was studied by finite element method. • Rapid heating thermal shock tests were conducted to validate the numerical results. Abstract The thermal shock failure has been recognized as one of key failure modes of [...]
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PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm) FZ 4″Ø ingot Intrinsic [...]
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