Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide 4″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
PAM XIAMEN offers Zero Diffraction Plate. SiO2 Single Crystal Zero Diffraction Plate for XRD Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement Zero Diffraction Plate for XRD sample: 30 x 30 x 2.5 mm with Cavity 10 ID x 1.0 mm, 2sp, SiO2 [...]
PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass). BK7 Glass BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40) BK7 (Schott) glass [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]
PAM XIAMEN offers YAlO3 Single crystal. YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching. Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]
PAM XIAMEN offers 4″Silicon Ignot. Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm), FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats. Lifetime>1,000us, Ox/Carbon <1E16/cc. For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found [...]
