Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Photographic Plate. Accuracy Index (Standard Size:430mmx430mm) Min.Line/Space Width 20μm/20μm CD Control ±2.0μm Total Pitch Accuracy ±5.0μm Registration Accuracy ±4.0μm Overlay Accuracy 4.0μm Orthogonality 4.0μrad Chrome Plate Material Substrate Material Soda Lime Glass Max. Size 24″×32″ Normal Size 5″x5″,20″x24″,22″x26″,24″x28″ Thickness 5.0mm±0.2mm Film Type Emulsion Optical Density(λ=450nm) ≥3.6 Main application areas: Mainly used in PCB, IC load board and IC Lead Frame and other industries For more information, please visit our website: https://www.powerwaywafer.com,send us email [...]
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3 We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
