Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]
Global semiconductor market is forecasted to reach 327 billion dollar in 2016 WSTS expects the world semiconductor market to be down 2.4% in 2016 at US$327 billion with growth returning in 2017 and 2018. For 2016, growth in Optoelectronics (1.8%), Sensors (7.6%), and Analog ICs (1%) [...]
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer Item Parameter Spec Unit 1 Growth Method CZ 2 Diameter 100+/-0.5 mm 3 Type-Dopant P- Boron 4 Resistivity 0.002 – 0.003 ohm-cm 5 Resistivity Radial Variation <10 % 6 Crystal Orientation <111> 4 +/- 0.5 degree 7 Primary Flat Orientation Semi degree Length Semi mm 8 Secondary Flat Orientation Semi degree Length semi mm 9 Thickness 525 +/- 25 μm 10 TTV ≦10 μm 11 Bow ≦40 μm 12 Warp ≦40 μm 13 Front Surface polished 14 Backside etched — 5000 +/-10% Angstoms SiO2 15 Surface Appearance no Cratches, haze, edge chips, orange peel, defects,contamination — 16 Edge Profile Edge Rounding 17 Particle (>0.3μm) N/A ea/wf 18 — — — 19 Epi Layer 1 N Phos — 20 Resistivity 3.8 – 5.2 ohm cm 21 Thickness 29.0 – 35.0 um — — — 22 Epi Layer [...]
We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]
PAM XIAMEN offers 12”Dummy wafer Surface:double side polished thickness ≥750um V Notch(SEMI STD) slight scratch (with no stains or heavy/deep scratches) For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
