Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375um. 3″ Si wafer Diameter: 76.2 +/- 0,1 mm Thickness: 375±25μm Orientation: <111> Dopant: p-type/Boron Resistivity<0.005Ωcm Front side polished Back side: frosted SEMI standard For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] [...]
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals. PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI Prime p-type Si:B [100] 3″ 350 P/E/P 0.100-0.200 SEMI Prime p-type Si:B [100] 3″ 400 P/P 0.015-0.016 SEMI Prime p-type Si:B [100] 3″ 380 P/P 0.01-0.02 SEMI Prime p-type Si:B [100] 3″ 380 P/E 0.003-0.004 SEMI Prime p-type Si:B [100] 3″ 100 P/P 0.0026-0.0030 SEMI Prime p-type Si:B [100] 3″ 300 P/E 0.002-0.003 SEMI Prime p-type Si:B [100] 3″ 525 P/E 0.0020-0.0027 SF @ 45° p-type Si:B [100] 3″ 380 P/E 0.001-0.005 SEMI Prime p-type Si:B [911] 3″ 380 P/E 5-6 PF <110> p-type Si:B [111] 3″ 380 P/E 18-21 SEMI Prime p-type Si:B [111] 3″ 775 P/E 13-14 Prime, NO Flatst p-type Si:B [111] 3″ 1000 P/E 10-20 Prime, NO Flatst p-type Si:B [111-4°] 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111] 3″ 2000 P/P 8-9 SEMI Prime, Individual cst p-type Si:B [111] 3″ 625 P/P 5-8 SEMI Prime p-type Si:B [111] 3″ 2300 P/P 4-7 SEMI Prime, Individual [...]
Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells A tandem solar cell in a mechanical (stack like) arrangement of gallium arsenide and silicon solar cells is evaluated as a pathway towards higher efficiency terrestrial solar cells. In this work the technical [...]
The wide band gap semiconductor materials represented by GaN and SiC have the advantages of fast electron saturation drift and strong radiation resistance, and have a wide range of applications in solid-state lighting, electronic power and mobile communications. Among them, solid-state lighting is of [...]
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies TECHNOLOGIES The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology. The MESFET (fig. [...]
