Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 0.5±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5 For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen [...]
CVD diamond substrate film is available with a maximum working temperature at 600℃ from PAM-XIAMEN at below spec. Single crystal diamond material has the highest thermal conductivity among natural substances known at present. Diamond substrate has stable chemical properties, good electrical insulation and low dielectric constant. The [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 381 P/E 0.085-0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers p-type Si:B [110] ±0.3° 3″ 381 P/E 0.0448-0.0672 SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst p-type Si:B [110] [...]
PAM XIAMEN offers Fe2O3 crystal . Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP Specifications: Crystal: Alpha-Fe2O3 natural source with defects Purity: >99.95% Size: [...]
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
GT Advanced Technologies Enters Development and Licensing Agreement with Soitec February 25, 2013…GT Advanced Technologies of Nashua, New Hampshire, and Soitec of Bernin, France announced a development and licensing agreement. The agreement will allowing GT to develop, manufacture and commercialize a high-volume, multi-wafer HVPE system [...]
