IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
FZ 4,200-8,000
SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafers
n-type Si:P
[100] ±0.2°
4″
380 ±10
P/E
FZ >3,500
SEMI TEST , 1 Flat
n-type Si:P
[100]
4″
400 ±10
P/P
FZ 3,100-6,800
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
200
P/P
FZ >3,000
SEMI Prime, MCC Lifetime > 1,000μs,
n-type Si:P
[100]
4″
400
P/E
FZ 2,000-6,500
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[100]
4″
915 ±10
E/E
FZ 2,000-3,000
1Flat at [100]
n-type Si:P
[100]
4″
300
L/L
FZ 1,100-1,600
SEMI
n-type Si:P
[100] ±1°
4″
200 [...]
2019-03-05meta-author
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP
Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦10@≧0.3um
Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413)
For more information, [...]
2021-03-18meta-author
Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]
2019-08-06meta-author
The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength [...]
InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or [...]