Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
PAM XIAMEN offers Si+SiO2 +Ti( or TiO2)+Pt Thin film.
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin [...]
2019-05-16meta-author
We provide thermal oxide wafer with/without Ti layer/Pt layer in diameter from 2″ to 6″,now we give examples as follows:
1) 4 inch,silicon prime/test wafer,deposited with 5000 Angstroms of silicon oxide
2) Pt layer+Ti layer+thermal oxide layer deposit on silicon wafer:
4 inch Prime grade silicon,1-20 ohm [...]
PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res
(Ohm-cm)
Thick
(um)
Polish
Grade
Description
PAM2716
150mm
N/A
650um
SSP
MECH
Low cost Si Wafer great for spin coating.
PAM2717
150mm
P
B
<100>
0-10
620 um
SSP
Test
Test Grade Silicon great for wafer processing studies.
PAM2718
150mm
N
<100>
0-100
625um
SSP
Test
6″ diameter (150mm), silicon wafers, N-type.
PAM2719
150mm
P
B
<100>
0.006-0.012
525um
SSP
Test
With Oxide Back Seal
PAM2720
150mm
P
B
<100>
1-100
500um
SSP
Test
2 SEMI-STD FLATS WHERE [...]
2019-02-20meta-author
AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]
2021-09-10meta-author
Gallium oxide (Ga2O3) is a direct ultra wide bandgap semiconductor with a relatively complex structure. Ga2O3 has 5 isomers, namely α、β、γ、ε and δ. These five crystal phases can undergo phase transformation and mutual transformation under certain conditions, among which β- Ga2O3 is the most [...]
2019-04-19meta-author