PAM XIAMEN offers Photographic Plate.
Accuracy Index (Standard Size:430mmx430mm)
Min.Line/Space Width
20μm/20μm
CD Control
±2.0μm
Total Pitch Accuracy
±5.0μm
Registration Accuracy
±4.0μm
Overlay Accuracy
4.0μm
Orthogonality
4.0μrad
Chrome Plate Material Substrate
Material
Soda Lime Glass
Max. Size
24″×32″
Normal Size
5″x5″,20″x24″,22″x26″,24″x28″
Thickness
5.0mm±0.2mm
Film Type
Emulsion
Optical Density(λ=450nm)
≥3.6
Main application areas:
Mainly used in PCB, IC load board and IC Lead Frame and other industries
For more information, please visit our website: https://www.powerwaywafer.com,send us email [...]
2019-07-04meta-author
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]
2018-08-14meta-author
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07meta-author
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
2019-12-23meta-author
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
2021-04-01meta-author