PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
280
P/E/P
1-20
SEMI Prime
p-type Si:B
[111-1.5°]
2″
400
P/E
1-10
SEMI Prime
p-type Si:B
[111]
2″
500
P/E
1-10
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
280
P/E
0.5-0.6
SEMI Prime
p-type Si:B
[111-3°]
2″
300
P/P
0.016-0.018
SEMI Prime
p-type Si:B
[111-3.5°]
2″
280
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[111]
2″
600
P/E
0.01-0.05
SEMI Prime
p-type Si:B
[111-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110]
2″
1000
P/P
~4
NO Flats
n-type Si:P
[110]
2″
950
P/P
2.5-3.5
1 F @ <1,-1,0>
n-type Si:P
[110]
2″
450
P/P
~0.6
1 F @ <001>
n-type Si:P
[110]
2″
1000
P/P
0.5-1.0
PF<111> SF 109.5°
n-type Si:P
[100]
2″
500
P/P
800-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
>50
SEMI Prime,
n-type Si:P
[100]
2″
5000
P/E
42-53
SEMI Prime, , Individual cst
n-type [...]
2019-03-07meta-author
Abstract
Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
SiC and GaN Wide Bandgap Device Technology
Wide bandgap (WBG) devices offer significant advantages for next generation military and commercial systems. SiC MESFETs currently achieve power densities of 4.0 W/mm with power added efficiencies in excess of 60% on a repeatable basis. They are commercially [...]
2013-03-13meta-author
PAM XIAMEN offers Nickel Single crystal.
tomic number: 28
Atomic number: 28
Atomic mass: 58.71 g.mol -1
Atomic mass: 58.71 g.mol -1
Crystal structure: F.C.C
Crystal structure: F.C.C
Lattice Constant: 0.325 nm
Lattice Constant: 0.325 nm
Ni Single crystal
Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished
Ni Single Crystal Substrate, <100>, 10×10 x [...]
2019-05-13meta-author