PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-10meta-author
Carbon neutrality refers to through afforestation, energy saving and emission reduction, etc., to offset the carbon dioxide or greenhouse gas emissions generated by itself, to achieve positive and negative offset, to achieve relatively “zero emissions”. Only by reducing energy consumption can carbon emissions be [...]
2022-06-02meta-author
Solar Silicon Wafers
PAM XIAMEN offers Solar Silicon Wafers.
Limiting Efficiency
It has been well established that the limiting efficiency of single crystals falls at about 29% [Swanson] this limit was established in the seminal work by Tiedje. In figure 1 we can see this limiting efficiency [...]
2019-02-14meta-author
PAM XIAMEN offers Magnesium ( Mg ) Single Crystal Substrate.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( [...]
2019-05-10meta-author
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the disadvantages [...]
2016-06-13meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
12.5±2.5
p- Si:B
2.35
n/p/p+
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
140±10
n- Si:P
33.6
n/p/p+
3″Øx381μm
n- Si:As[111-4°]
0.001-0.005
P/E
5.5
n- Si:P
0.31 – 0.33
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
37.5
n- Si:P
0.6±10%
n/n+
3″Øx525μm
n- Si:P[111]
0.001-0.005
P/E
4.5
n- Si:P
1.1 – 1.4
n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
5.5
n- Si:P
1.06±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
11
n- Si:P
17.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.7±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
2.1±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.8±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
16±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
13
n- Si:P
1.35±10%
n/n+
3″Øx381μm
n- [...]
2019-03-08meta-author