PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide
2″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 ohm * cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates. General Properties for Tungsten Symbol W Atomic Number 74 Atomic Weight: 183.84 Crystal structure: BCC Lattice constant at room temperature: 0.316 nm Density: 19.25 g/cm3 Melting Point: 3422 °C Boiling Point: 5555 °C Tungsten (W) Polycrystalline Substrate: [...]
Carbon neutrality refers to through afforestation, energy saving and emission reduction, etc., to offset the carbon dioxide or greenhouse gas emissions generated by itself, to achieve positive and negative offset, to achieve relatively “zero emissions”. Only by reducing energy consumption can carbon emissions be [...]
Solar Silicon Wafers PAM XIAMEN offers Solar Silicon Wafers. Limiting Efficiency It has been well established that the limiting efficiency of single crystals falls at about 29% [Swanson] this limit was established in the seminal work by Tiedje. In figure 1 we can see this limiting efficiency [...]
PAM XIAMEN offers Magnesium ( Mg ) Single Crystal Substrate. Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut Magnesium ( Mg) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP Magnesium ( [...]
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the disadvantages [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+ 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+ 3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+ 3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+ 3″Øx381μm n- [...]
