PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html.
Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, [...]
2024-04-11meta-author
PAM XIAMEN offers Au coated Silicon wafer /Microscope Slides.
High quality glass, standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating. Can be used for a wide range of nanotechnology, [...]
2019-04-26meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
2019-04-19meta-author
We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
<1ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. [...]