3″ Silicon EPI Wafer-1

PAM XIAMEN offers 3″ Silicon EPI Wafers.

SubstrateEPIComment
SizeTypeRes
Ωcm
Surf.Thick
μm
TypeRes
Ωcm
3″Øx381μmp- Si:B[111]0.004-0.008P/E12.5±2.5p- Si:B2.35n/p/p+
3″Øx381μmp- Si:B[111]0.004-0.008P/E140±10n- Si:P33.6n/p/p+
3″Øx381μmn- Si:As[111-4°]0.001-0.005P/E5.5n- Si:P0.31 – 0.33n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E37.5n- Si:P0.6±10%n/n+
3″Øx525μmn- Si:P[111]0.001-0.005P/E4.5n- Si:P1.1 – 1.4n/n+, Sealed in cassettes of 24 wafers
3″Øx381μmn- Si:As[111]0.001-0.005P/E5.5n- Si:P1.06±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E11n- Si:P17.5±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P1.7±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P2.1±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P1.3±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P1.8±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P1.3±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E12n- Si:P16±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E13n- Si:P1.35±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E15.5n- Si:P9.5±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E15.5n- Si:P9.5±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E18n- Si:P0.05±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E22n- Si:P4.8±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E22n- Si:P4±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E22n- Si:P4±10%n/n+
3″Øx381μmn- Si:As[111]0.001-0.005P/E28n- Si:P16.5±10%n/n+

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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