3″ Silicon EPI Wafer-1

PAM XIAMEN offers 3″ Silicon EPI Wafers.

Substrate EPI Comment
Size Type Res
Ωcm
Surf. Thick
μm
Type Res
Ωcm
3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+
3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+
3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+
3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 15.5 n- Si:P 9.5±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 0.05±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4.8±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 22 n- Si:P 4±10% n/n+
3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 16.5±10% n/n+

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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