4″ CZ Epitaxial Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.

4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back side etched
Above substrates are supplied by Powerway

Epi Layer 1 : N type Phosphorous Doped
Resistivity: 3.8 -5.2 ohm cm
Thickness: 29.0 -35.0 microns (um)
Epi Layer 2 : N type Phosphorous Doped
Resistivity: < .0016 -.0024 ohm cm
Thickness: 36.0 -44.0 microns (um)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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