PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author
PAM XIAMEN offers CeO2 Epi Film on YSZ.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
Epitaxial thin Film Composition
<100> CeO2
Epitaxial Film Thickness
40 nm +/- 10 nm
Growth method
Spin coating
Epitaxial FWHM
< 5 o
Substrate
<100>, YSZ, 10x10x0.5 mm, one side polished
CeO2 Film (40 nm one side) on YSZ [...]
2019-04-19meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor’s length and width. Piezoresistors [...]
2018-01-18meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author