PAM XIAMEN offers high-quality Al2O3 (Sapphire).
A-plane (11-20)
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP
Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP
Al2O3 – [...]
2019-04-16meta-author
The SiC wafer application fields are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of silicon carbide wafer usage are [...]
2021-04-13meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE
We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]
With the increasing development of semiconductor devices, silicon and silicon-based materials still show their superior properties, and it will still be an important material for semiconductor devices and integrated circuits. With the decreasing size of devices, the resistivity, impurity distribution, film thickness and quality [...]
2022-08-30meta-author
PAM XIAMEN offers GaP Substrate (100) .
GaP (100) undoped
GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
2019-04-22meta-author