PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8
Item5, 125pcs
Silicon wafer:
i. Diameter:100 mm ± 0.5 mm,
ii. Thickness: 525μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected]
PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution. PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working [...]
Military and civil authorities could benefit from secure optical communication systems that use light to carry messages between moving vehicles. Researchers at KAUST have now demonstrated rapid data transfer using ultraviolet-B (UV-B) light, which provides many advantages over visible light. Optical communications systems using visible [...]
PAM-XIAMEN can offer 2&3 inches P-type GaAs substrates. Gallium arsenide (GaAs) is a III-V type direct band gap semiconductor with a zinc blend crystal structure, and GaAs p-type dopant is commonly used as a substrate for epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium [...]
6″CZ Prime Silicon Wafer-3 PAM XIAMEN offers 6″CZ Prime Silicon Wafer with orientation (111) In materials science, when discussing the growth of crystals, the position of atoms in crystals, the direction of atomic rows and the plane of atoms are often involved. We call the crystal [...]
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic [...]
PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]
