FWHM and XRD report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
2022-04-11meta-author
PAM XIAMEN offers YIG Epi. Film on GGG.
YIG Film ( 3 microns) on GGG Substrate, (111), 10x10x0.5mm, single side coated
YIG Film ( 3 microns) on GGG Substrate, (111), 5x5x0.5mm, single side coated
YIG Film (4-5 um, ) on both sides of GGG [...]
2019-04-29meta-author
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP
Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦[email protected]≧0.3um
Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413)
For more information, [...]
2021-03-18meta-author
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
PAM XIAMEN offers indium gallium arsenide (InGaAs) epi layer on semi-insulating InP substrate by MOCVD deposition. InGaAs is a light-sensitive material, and its response band can be adjusted by adjusting the value of In component x to obtain a response of 0.87~3.5um. The working band of [...]
2019-04-28meta-author