Silicon carbide (SiC) wafer material supplied by PAM-XIAMEN, like SiC substrate (link: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html) is widely used in aerospace, radar communication, automotive industry and semiconductor industry due to its excellent properties such as high thermal conductivity, high strength, high temperature resistance and radiation resistance. However, [...]
2022-07-15meta-author
Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] ±0.5° 1″ 50 ±10 P/P 1-100 n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers n-type Si:P [100] 1″ 280 P/P 1-20 SEMI Prime n-type Si:P [100] 1″ 280 P/E 1-5 SEMI n-type Si:P [100] 1″ 1500 P/E 1-20 Prime, n-type Si:P [100] 1″ 525 P/E 0.05-0.15 SEMI n-type Si:P [111] 1″ 330 P/E FZ >90 Prime p-type Si:B [100] 1″ 775 P/E 8-12 SEMI Prime p-type Si:B [100] 24mm 300 P/E 1-100 Prime, p-type Si:B [100] 1″ 300 P/E 1-10 Prime, p-type Si:B [100] 1″ 500 P/E 1-10 p-type Si:B [100] 1″ 380 P/E 0.003-0.005 SEMI Prime p-type Si:B [100] 1″ 275 P/E 0.002-0.005 Prime n-type Si:P [100] 1″ 50 ±10 P/P >20 SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author
PAM XIAMEN offers LSGM single crystal substrate. Now LSGM (La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ) single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
2019-05-10meta-author
PAM XIAMEN offers MgAl2O4 ( spinel ) single crystals. MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. [...]
2019-05-10meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 P Boron CZ -111 .001-.005 300-350 P/E PRIME 50.8 P Boron CZ -110 1-20 225-275 P/P PRIME 50.8 P Boron CZ -110 1-20 250-300 P/E PRIME 50.8 Any Any CZ Any Any 200-500 P/E TEST 50.8 Any Any CZ Any Any 800-1000 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Intrinsic Undoped FZ -100 5000-10000 275-325 P/E PRIME 50.8 SI. Undoped VGF -100 >1E7 325-375 P/E PRIME 50.8 N Si VGF 4E+18 250-300 P/E EPI 50.8 N Si VGF -100 325-375 P/E PRIME 50.8 P Zn VGF -100 325-375 P/E PRIME 50.8 Undoped CZ -100 >30 300-350 P/P EPI 50.8 Undoped CZ -100 >30 350-400 P/E EPI 50.8 N Sb CZ (100)off 6-9 tow .01-.04 150-200 P/E EPI 50.8 N Sb CZ -100 .005-.02 300-350 P/P EPI 50.8 N Sb CZ -100 .005-.02 350-400 P/E EPI 50.8 P Ga CZ -100 .01-.04 300-350 P/P EPI 50.8 P Ga CZ -100 .01-.04 350-400 P/E EPI 50.8 R-Axis CZ 300-350 P/E TEST 50.8 N Si VGF -100 275-325 P/E PRIME 50.8 P Zn VGF -100 275-325 P/E PRIME 50.8 Si Fe VGF -100 5000000 325-375 P/E PRIME 50.8 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 50.8 Shipping Cassette ePak Holds25Wafers Clean Room For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
2019-03-04meta-author