4″ Silicon Wafer-12

4″ Silicon Wafer-12

PAM XIAMEN offers 4″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
n-type Si:P [100] 4″ 525 P/P 1-100 SEMI Prime, TTV<5μm
n-type Si:P [100] 4″ 525 P/E 0.3-0.5 SEMI
n-type Si:P [100] 4″ 300 P/E 0.29-0.31 SEMI Prime
n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Not sealed both sides scratched
n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Both sides with scratches
n-type Si:P [100] 4″ 200 P/E 0.10-0.15 SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb [100] 4″ 525 P/E 0.020-0.022 Prime
n-type Si:Sb [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime
n-type Si:Sb [100] 4″ 525 P/E 0.011-0.014 Prime
n-type Si:Sb [100] 4″ 305 ±3 P/P 0.010-0.025 SEMI Prime, TTV<1μm
n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime, TTV<5μm
n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime
n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime
n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime
n-type Si:As [100] 4″ 545 E/E 0.002-0.004 SEMI
n-type Si:As [100] 4″ 525 P/P 0.001-0.005 SEMI Prime
n-type Si:As [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, TTV<5μm
n-type Si:As [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, TTV<5μm
n-type Si:As [100] 4″ 525 P/E 0.001-0.005 SEMI Test (Chipped edge)
n-type Si:As [100] 4″ 525 PlyAP/E 0.001-0.005 With layer of Al2O3, ~0.1μm or ~0.05μm thick, Wafers with a matrix of Polycrystalline Silicon dots,
n-type Si:As [100] 4″ 550 ±10 P/P 0.001-0.005 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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