4″ Silicon Wafer-14

4″ Silicon Wafer-14

PAM XIAMEN offers 4″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
n-type Si:As [111-4°] ±0.5° 4″ 325 P/E 0.001-0.005 SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As [111-4°] ±0.5° 4″ 300 P/E 0.001-0.005 SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As [111-2°] ±0.5° 4″ 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As [111-4°] ±0.5° 4″ 525 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime
n-type Si:As [111] ±0.5° 4″ 1000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, TTV<4μm, Bow<10μm, Warp<20μm
n-type Si:As [111-4°] 4″ 525 L/L SEMI TEST  (2nd @ 45°)
n-type Si:P [112] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, in Empak cassettes of 2 wafers
Si ? 4″ ? P/P SEMI TEST (Unsealed)
Si ? 4″ ? P/P SEMI TEST (Unsealed)
Si [110] ±0.5° 4″ 525 C/C Empak cst
n-type Si:P [100] 4″ 500 P/P FZ >5,000 Prime, NO Flats
n-type Si:P [100] 4″ 800 P/P FZ 2,000-3,000 SEMI Prime at [100], TTV<5μm
n-type Si:P [100] 4″ 500 P/P FZ 198-200 SEMI Prime
n-type Si:P [100-6°] ±0.5° 4″ 325 P/P FZ 1-10 SEMI Prime
n-type Si:P [100-6°] ±0.5° 4″ 325 P/P FZ 1-10 SEMI Prime
n-type Si:P [100] 4″ 500 P/P FZ 1-3 SEMI
n-type Si:P [111] ±0.5° 4″ 275 P/P FZ 2,700-3,300 SEMI Prime
n-type Si:P [111] ±0.5° 4″ 470 P/E FZ 6.03-7.37 SEMI
n-type Si:P [111] ±0.5° 4″ 1000 P/P FZ 0.011-0.013 Prime, NO Flats
Intrinsic Si:- [100] 4″ 675 P/P FZ >10,000 SEMI Prime, TTV<2μm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

2019-03-05

Share this post

Related Posts

LEAD-TUNGSTATE CRYSTALS PBWO4

PAM XIAMEN offers Lead-Tungstate Crystals PbWO4. PRODUCT DESCRIPTION FOR LEAD-TUNGSTATE CRYSTALS Lead Tungstate (PbWO4) crystal is a scintillator which has been used as the detect material by several high energy physics devices, e.g., CMS detector in CERN. The crystal is distinguished by its fast decay time, high density [...]

2019-03-14meta-author
Wide Band Gap semiconductors

The development stages of semiconductor wafers are elemental semiconductor, compound semiconductor and wide bandgap semiconductor, as shown in the Fig. 1. Semiconductor wafers can be divided into narrow band gap semiconductors and wide band gap semiconductors according to different band gaps. Wide Band Gap [...]

2019-03-21meta-author
Test grade silicon wafers-10

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 5 Ohmcm 200 ± 0.5 mm 650 ± 5 µm 20 3 35 8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.7 – 5.0 [...]

2019-02-25meta-author
InAs wafer

PAM XIAMEN supply InAs wafer up to 2″” diameter. InAs <100> doped InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished InAs (100), S-doped 2″ dia x 0.5 [...]

2019-05-06meta-author
Semiconductor Science and Technology The influence of growth conditions on the quality of CdZnTe single crystals

Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ [...]

2019-07-16meta-author
IR Transmittance Report

IR Transmittance Report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]

2018-08-14meta-author