PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1
Item8, 25pcs
Silicon wafer:
i. Diameter: 150 mm ± 0.5 mm,
ii. Thickness: 675μm ±25μm
iii. Doping: P type
iv. Orientation: (111) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: Prime
Resistivity: 1 Ohm-cm to 10 Ohm-cm
Surface: single side polished
Flats: SEMI Standard
Surface roughness: ≤ 5Å
For more information, send us email at [email protected] and [email protected].
Highlights •The thickness of graphene grown on SiC was determined by AES depth profiling. •The AES depth profiling verified the presence of buffer layer on SiC. •The presence of unsaturated Si bonds in the buffer layer has been shown. •Using multipoint analysis thickness distribution of the graphene on [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [111-2.5°] 3″ 300 P/E 0.014-0.018 SEMI Prime n-type Si:Sb [111-3.5°] 3″ 380 P/E 0.014-0.016 SEMI Prime n-type Si:Sb [111-3°] 3″ 300 P/E 0.011-0.016 SEMI Prime n-type Si:Sb [111] ±0.5° 3″ 300 P/P 0.01-0.20 SEMI Prime n-type Si:Sb [111] 3″ 380 P/E 0.008-0.025 SEMI Prime n-type Si:As [111-0.5°] 3″ 380 P/P 0.003-0.005 SEMI Prime n-type Si:As [111] 3″ 380 P/E/P 0.002-0.005 SEMI Prime n-type Si:As [111-2.5°] 3″ 380 P/E 0.002-0.005 SEMI Prime n-type Si:As [111-4°] 3″ 380 P/E 0.002-0.005 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material [...]
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow: 1. Specifications of GaAs Epiwafer with AlGaAs Multilayers VCSEL, 980nm, GaAs epiwafer, 4″size PAM210208 Layer No. Material Group Repeat Mole Fraction(x) Strain(ppm) PL(nm) Thickness(nm) Dopant 32 GaAs – – – – – 156 C 31 Al(x)GaAs – – 0.04 – – 50.5 C 30 Al(x)GaAs – – 0.87->0.04 – – 20 C 29 Al(x)GaAs – – 0.87 – – 59.7 C 28 Al(x)GaAs – 16 0.04->0.87 – – 20 C 27 Al(x)GaAs – 0.04 – – 51.5 C 26 Al(x)GaAs – 0.87->0.04 – – 20 C 25 Al(x)GaAs – 0.87 – – 59.7 C 24 Al(x)GaAs – – 0.04->0.87 – – 20 C 23 Al(x)GaAs – – 0.04 – – 32.9 C 22 Al(x)GaAs – – 0.80->0.04 – – 20 C 21 Al(x)GaAs – – 0.98 – – 20 C 20 Al(x)GaAs – – 0.8 – – 61.6 C 19 GaAsP – – – – – – UD 18 In(x)GaAs – – – – 970nm – UD 17 GaAsP – – – – – – UD 16 In(x)GaAs – – – – 970nm – UD 15 GaAsP – – – – – – UD 14 In(x)GaAs – – – – 970nm – UD 13 GaAsP – – – – – – UD 12 Al(x)GaAs – – 0.87 – – 59.7 Si 11 Al(x)GaAs – – 0.04->0.87 – – 20 Si 10 Al(x)GaAs – – 0.04 – – 51.5 Si 9 Al(x)GaAs – – 0.87->0.04 – – 20 Si 8 Al(x)GaAs – 6 0.87 – – 59.7 Si 7 Al(x)GaAs – 0.04->0.87 – – 20 Si 6 Al(x)GaAs – 0.04 – – 51.5 Si 5 Al(x)GaAs – 30 0.92->0.04 – – 20 Si 4 Al(x)GaAs – 0.92 – – 59.8 Si 3 Al(x)GaAs – 0.04->0.92 – – 20 Si 2 Al(x)GaAs – 0.04 – – 51.5 Si 1 GaAs – – – – – 500 Si 4 inch GaAs substrate Si doped; [...]
GaN-On-Si Key Patent Analysis The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/Dopant N/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat [email protected][111]±<0.25° Primary Flat Length 32.5± 2.5mm Secondary Flat [email protected][111]70.5° CW from primary flat Front side finish [...]
PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
