Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]
Blue GaN LD (Laser Diode) Wafer
We can offer 2” InGaN/GaN quantum well blue LD wafer on sapphire or silicon substrate(PAM-190909-GAN-LD) as follow:
1.Specification of 440-460nm LD wafer:
Item
Descriptions
Materials
Substrate
blue laser
440-460nm
InGaN
2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
Spec
EPI Wafer Size
Growth
MOCVD
Diameter
50.8 ± 0.2 mm
Thickness
430 ± 30 um
EPI thickness
um
EPI Wafer [...]
2018-08-22meta-author
PAM XIAMEN offers GaP Substrtaes (110).
GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp
GaP Wafer, undoped (110) 10x10x0.5 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.2 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp”
GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp
For more information, [...]
2019-04-22meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from [...]