PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 50.8mm Si wafers. Please send us email at [email protected]owerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2179 p-type Si:B [100] 2″ 300 P/E 1–10 SEMI Prime, 2Flats, hard cst PAM2180 p-type Si:Ga [100] 2″ 350 P/P 1–5 SEMI Prime, 2Flats, hard cst PAM2181 p-type Si:B [100] 2″ 500 P/E 1–2 SEMI Prime, 2Flats, hard cst PAM2182 p-type Si:B [100] 2″ 900 P/E/P 1–10 SEMI Prime, 2Flats, hard cst PAM2183 p-type Si:B [100] 2″ 2000 P/P 1–10 SEMI Prime, 2Flats, Individual cst PAM2184 p-type Si:B [100] 2″ 2000 P/E 1–10 SEMI Prime, [...]
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
Fabrication of GaN wafers for electronic and optoelectronic devices The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -1 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
