The single crystal germanium is n type at room temperature, and the resistivity shows non-single dependence on temperature. When conduction type transits from n type to p type, the bulk germanium resistivity is in maximum, and the carrier mobility is declining. With the increasing [...]
2021-11-10meta-author
PAM XIAMEN offers BaSrTiO3 Film on substrate.
BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp
Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating:
Film Sppecifications:
Chemical composition: BaSrTiO3
Film thickness: ~ 400 nm
Crystalline: Polycrystal
Growth [...]
2019-04-26meta-author
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
2019-03-12meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs / InP Epitaxial Wafer in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality InP (Indium Phosphide) Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, [...]
PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm.
3″ Si wafer with Thermal Oxide of thickness 1000A
Diameter: 3″
Diameter: 76.2±0.3mm
Thickness: 380±20μm
Orientation: <100>±1°
Type/dopant: N type/Phosphorus
Resistivity: 1-20Ωcm
Polishing: SSP
Primary Flat 22.5±2.5mm, (110)±1°
Surface roughness: <5A
For more information, please visit [...]
2019-08-22meta-author
PAM-01A series are planar CZT crystal based detector which is super small. With high sensitive CZT crystal and low noise charge sensitive amplifier built in, they can detect energy spectrum of X-ray and low energy γ-ray in a high resolution.
1. Specification of High [...]
2019-04-24meta-author