PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
What are Silicon Wafer Flats? PAM XIAMEN offers Silicon Wafer Flats Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation. Below is an example of silicon wafers flat specs: Spec. 2” 3” 100mm 125mm 150mm 200mm 300mm Diameter 2.000+/-.015” 3.000+/-.025” 100+/-.5mm 125+/-.5mm 150+/-.2mm 200+/-.2mm 300+/-.2mm 50.8+/-.38mm 76.2+/-.63mm Thicknes s 0.011+/-.001” 0.015+/-.001” 525+/-20 um [...]
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-21)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers 6″CZ Si Wafer with low LPD Wafer Si CZ (100) Dia 6” x Thickness 675µm Type p doped B Resistivity 1-20 ohm.cm With one flat One Side Polished or Double Side Polished LPD’s < 50 @ 0.2um TTV < 25µm Bow < 60µm Warp < 60µm For more information, send us email [...]
PAM XIAMEN offers Single crystal YVO4. YVO4 is an excellent birefringent crystal for fiber optics applications. As substrate, it can replace TiO2 for lower cost and better quality in many cases Crystal Birefr-ingence D=he-ho Refractive index h atl= 0.63m Thermooptical Coef.dh/dT106/K Structure lattice constant (A) Melting point oC Density g/cm3 Hard-ness (Moh) Thermal Coef. 10-6/K YVO4 0.222 ho=1.9929 he=2.2154 a: [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI Prime p-type Si:B [100] 3″ 350 P/E/P 0.100-0.200 SEMI Prime p-type Si:B [100] 3″ 400 P/P 0.015-0.016 SEMI Prime p-type Si:B [100] 3″ 380 P/P 0.01-0.02 SEMI Prime p-type Si:B [100] 3″ 380 P/E 0.003-0.004 SEMI Prime p-type Si:B [100] 3″ 100 P/P 0.0026-0.0030 SEMI Prime p-type Si:B [100] 3″ 300 P/E 0.002-0.003 SEMI Prime p-type Si:B [100] 3″ 525 P/E 0.0020-0.0027 SF @ 45° p-type Si:B [100] 3″ 380 P/E 0.001-0.005 SEMI Prime p-type Si:B [911] 3″ 380 P/E 5-6 PF <110> p-type Si:B [111] 3″ 380 P/E 18-21 SEMI Prime p-type Si:B [111] 3″ 775 P/E 13-14 Prime, NO Flatst p-type Si:B [111] 3″ 1000 P/E 10-20 Prime, NO Flatst p-type Si:B [111-4°] 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111] 3″ 2000 P/P 8-9 SEMI Prime, Individual cst p-type Si:B [111] 3″ 625 P/P 5-8 SEMI Prime p-type Si:B [111] 3″ 2300 P/P 4-7 SEMI Prime, Individual [...]
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate. Main Parameters Crystal structure M3 Unit cell constant a=5.147 Å Melt point（℃） 2700 Density（g/cm3） 6 Hardness 8-8.5（mohs） Purity 99.99% Thermal expansion（/℃） 10.3×10-6 Dielectric constants ε=27 Growth method arcs Size 10×3，10×5，10×10，15×15，，20×15，20×20 dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm Thickness 0.5mm，1.0mm Polishing Single or double Crystal orientation <001>±0.5º redirection precision ±0.5° Redirection the edge: 2°（special in 1°） Angle of crystalline Special size and orientation are available upon [...]
