PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane sapphire [...]
Electronic lifetime engineering using low-temperature GaAs in a quantum well structure Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm [...]
PAM XIAMEN offers8″ Silicon Wafer-3 Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Notch SEMI STD Chamfer width 250-350μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com With more than 25+years experiences in compound semiconductor material field and [...]
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline). General Properties for Molybdenum Symbol Mo Atomic Number 42 Atomic Weight: 95.96 g/mol Crystal structure: BCC Lattice constant at room temperature : 0.315 nm Density: 10.28 g/cm3 Melting Point: 2623 °C Boiling Point: 4639 °C Mo Polycrystalline Substrate: [...]
PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]
