PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Single crystal ZnSe. ZnSe (100) 10x10x0.5mm, 1sp ZnSe (100) 10x10x0.5mm, 2sp ZnSe (100) 10x10x1.0mm, 2sp ZnSe (100) 10x5x0.5mm, 1sp ZnSe (100) 10x5x1.0mm, 1sp ZnSe (100) 5x5x0.5mm, 1sp ZnSe (110) 10x10x1.0mm, 2sp with s/d: 60/40 on both sides, High resistivity ZnSe (111) [...]
AlGaInP LED Chip Sepcification · Orange LED Wafer Substrate: P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60 Source:PAM-XIAMEN If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
M Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-N Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector Different wavelength IR light (770–1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) [...]
(11-22) Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- U Dimension 380+/-50um Thickness 350 ±25 µm 430 ±25 µm Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers LiNbO3 Lithium Niobate Crystal. Lithium niobate is a ferroelectric material with excellent electro-optic, nonlinear, and piezoelectric properties. Lithium niobate crystals are important materials for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications. Find lithium niobate [...]
