PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at [email protected]owerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2179
p-type Si:B
[100]
2″
300
P/E
1–10
SEMI Prime, 2Flats, hard cst
PAM2180
p-type Si:Ga
[100]
2″
350
P/P
1–5
SEMI Prime, 2Flats, hard cst
PAM2181
p-type Si:B
[100]
2″
500
P/E
1–2
SEMI Prime, 2Flats, hard cst
PAM2182
p-type Si:B
[100]
2″
900
P/E/P
1–10
SEMI Prime, 2Flats, hard cst
PAM2183
p-type Si:B
[100]
2″
2000
P/P
1–10
SEMI Prime, 2Flats, Individual cst
PAM2184
p-type Si:B
[100]
2″
2000
P/E
1–10
SEMI Prime, [...]
2019-02-18meta-author
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
2017-10-30meta-author
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]
Fabrication of GaN wafers for electronic and optoelectronic devices
The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
2018-08-16meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-03-10meta-author