PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers Mica disk. Pure Mica Sheet Highest Grade Mica Disks, 9.9mm diameter 10/pkg Highest Grade Mica Disks, 20mm diameter 10/pkg Highest Grade Mica Sheets, 15mm x 15mm (0.59” x 0.59″), 0.15 to 0.177mm (0.006-0.007″) thick, 10/pkg Hi-Grade Mica Sheets, 15mm x 15mm [...]
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 880nm Filling Factor: 30% Output Power: 80W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]
PAM XIAMEN offers BiFeO3 Film on (Pt/Ti/SiO2/Si). 150 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp 400 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp BiFeO3 Film（400nm) on (Pt/Ti/SiO2/Si)，10x10x0.5mm For more information, please visit our website: [...]
Highlights •Elaboration of a smooth 3C–SiC membrane on a SiC substrate. •Faceted surface for the (110) orientation but smoother for the (111) orientation. •Roughness of the 3C–SiC membrane limited to 9 nm for the (111) orientation. •New MEMS devices feasible. •The huge SiC properties could be entirely exploited. The cubic [...]
