1-5.Thermal Expansion Coefficient
Thermal expansion is the tendency of matter to change in volume in response to a change in temperature.
When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
2018-06-28meta-author
5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
2-6.Wafer Primary Flat
The flat of longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane; major flat.
The primary at is the {10-10} plane with the at face parallel to the <11-20> direction.
2018-06-28meta-author
2-37.Test Grade
Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
5-5-6 SiC Device Packaging and System Considerations
Hostile-environment SiC semiconductor devices and ICs are of little advantage if they cannot be reliably packaged and connected to form a complete system capable of hostile-environment operation. With proper material selection, modifications of existing IC packaging technologies appear [...]
2018-06-28meta-author