5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
2018-06-28meta-author
3-5. Backside Cleanliness
Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
2018-06-28meta-author
5-2-1-1 SiC Crystallography
Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
2018-06-28meta-author
5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author
2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2018-06-28meta-author
3-10. Carrots
Similar to comet tails in appearance except they are more angular and lack a discrete head. If present, these features are aligned parallel to the major at. Usually,any carrots present tend to be of the same length. Count once per occurrence. Two [...]
2018-06-28meta-author