PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-07-11meta-author
What are Silicon Wafer Flats?
PAM XIAMEN offers Silicon Wafer Flats
Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation.
Below is an example of silicon wafers flat specs:
Spec.
2”
3”
100mm
125mm
150mm
200mm
300mm
Diameter
2.000+/-.015”
3.000+/-.025”
100+/-.5mm
125+/-.5mm
150+/-.2mm
200+/-.2mm
300+/-.2mm
50.8+/-.38mm
76.2+/-.63mm
Thicknes s
0.011+/-.001”
0.015+/-.001”
525+/-20 um [...]
2019-02-15meta-author
PAM XIAMEN offers Tempered Gorilla Glass.
The glass is great for strong and inexpensive screen displays.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]