PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
With the sudden outbreak of COVID-19, some vertical categories that are not usually paid attention to quickly became popular. Materials related to epidemic prevention and control, such as masks, goggles, and disinfectant, have become popular. Among them, UVC (Ultra Violet C radiation) LED with [...]
2022-05-30meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100-4.0°] ±0.5°
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
200
P/P
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
350
P/P
FZ >10,000
SEMI Test, Wafers with edge chips
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime, in hard cassettes of 2 & 5 wafers
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] [...]
2019-03-07meta-author
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
2019-12-23meta-author
PAM XIAMEN offers 6″ FZ Silicon Ingot with Diameter 150.7±0.3mmØ
Silicon ingot, per SEMI, G 150.7±0.3mmØ
FZ p-type Si:B[110]±2.0°
Ro > 1,000 Ohmcm
Ground Ingot
NO Flats
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc
MCC Lifetime>1,000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16
4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06meta-author