PAM XIAMEN offers Silicon Nitride film on Silicon Wafer.
Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm
Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-29meta-author
Nichia Develops Higher Power Green Laser Diodes
CompoundSemi News Staff
November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]
2013-02-28meta-author
PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]
2021-06-23meta-author
Gartner: worldwide semiconductor revenue declined 2.3% in 2015
Worldwide semiconductor revenue totaled 334.8 billion dollar in 2015, a 2.3 percent decline from 2014, according to final results by Gartner. The combined revenue of the top 25 semiconductor vendors fell by 0.5 percent during 2015. This was [...]
2016-07-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[5,5,12] ±0.5°
3″
380
P/E
1-10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/P
>10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/E
>10
SEMI Prime
p-type Si:B
[111-28° towards[001]] ±0.5°
3″
400
P/E
>20
SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111] ±0.5°
3″
508
E/E
0.792-1.008
SEMI TES, TTV<2μm, Epak cst
p-type Si:B
[111-4°] [...]
2019-03-06meta-author