PAM XIAMEN offers GaP Substrate (100) .
GaP (100) undoped
GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
2019-04-22meta-author
PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped [...]
2020-05-14meta-author
Military and civil authorities could benefit from secure optical communication systems that use light to carry messages between moving vehicles. Researchers at KAUST have now demonstrated rapid data transfer using ultraviolet-B (UV-B) light, which provides many advantages over visible light.
Optical communications systems using visible [...]
2018-01-05meta-author
PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1
Item4, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ± 25μm
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-27meta-author
The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]
2022-08-16meta-author
PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer DSP
4″ FZ (100) intrinsic, DSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
2 sides polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author