PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power [...]
2024-03-27meta-author
GaN epi layers are usually grown by MOCVD on various substrates, such as sapphire, Si and SiC substrate. The choice of substrate varies according to the needs of the applications. So for RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) application, SiC substrate, which [...]
2022-03-21meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
PAM XIAMEN offers NdCaAlO4 crystal.
Crystal
Structure /lattice constant
M.P. oC
Density g/cm3
Thermo-Expans
x10-6/K
Dielectric constant
Lattice Mismatch to YBCO
Max. Dia
NdCaAlO4
Tetrag.a=3.685 c=12.12
1850
5.56
12
19.5
0.055
CZ 35mm
NdCaAlO4 (001) 10x10x0.5 mm, 1 side polished
NdCaAlO4 (001) 10x10x0.5 mm, 2 sides polished
NdCaAlO4 (100) 10x10x0.5 mm, 1 side polished
For more information, please visit our [...]
2019-05-13meta-author
In the fields of aerospace engines, geothermal development, and automotive electronics, there is a widespread demand for pressure measurement under extreme high temperature conditions. For a long time, silicon-based microelectromechanical systems (MEMS) pressure sensors have been widely used, with the advantages of miniaturization and [...]
2024-05-16meta-author