PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
Measurements on the spectroscopic performance of CdZnTe coplanar grid detectors A performance study was performed for CdZnTe coplanar grid (CPG) detectors when used as γ-ray spectrometers. The detectors have the crystal volumes of 1, 1.6875 and 2.25 cm3, respectively. Time stability of each CdZnTe CPG detector [...]
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(11-22)- SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (11-22) plane off angle toward A-axis 0 ±0.5° (11-22) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient [...]
PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution. CZT Asymmetry Detector 1. CZT High Energy Resolution Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 5.0×5.0mm2 10.0×10.0mm2 Thickness 2.50mm 5.0mm Electrode material Au Operation temperature 0℃-+40℃ (standard)/ -20℃-+40℃ (customized) Operation voltage ≤900V Energy range 10KeV~2.6MeV Energy resolution(22℃) <2.5%@662MeV Peak-compton ratio >3 Storage temperture 10℃~40℃ Storage humidity 20%-80% Remarks Customized [...]
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