PAM XIAMEN offers 125mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
125
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
125
N
Phos
CZ
-100
1-20
550-600
P/E/OX
PRIME
125
N
Phos
CZ
-100
1-20
575-625
P/E/WTOx
125
N
Phos
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
N
Phos
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
125
P
Boron
CZ
-100
1-50
550-650
P/E
PRIME
125
P
Boron
CZ
-100
1-20
575-625
P/E/WTOx
125
P
Boron
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
P
Boron
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
FZ
-100
1000-5000
875-925
P/E
PRIME
125
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
125
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-04meta-author
PAM XIAMEN offers EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Eu doped calcium fluoride, Eu: CaF2, is an excellent scintillation crystal. It has been widely used in low energy nuclear physics [...]
2019-03-11meta-author
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
2020-03-09meta-author
Xiamen Powerway offers InSb (indium antimonide) epi wafer with homogeneous structure, which can be used to detect infrared radiation with a wavelength of 8~12um. Homoepitaxial InSb epi wafer on InSb substrate can improve the operating temperature of indium antimonide detector.
InSb epi ready wafer
1. InSb Homogeneous Structures
1.1 [...]
2020-03-25meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
4”FZ P-type
orientation 111
thickness 400±15
Resistivity 15000Ωcm
polished side 1
Acid etched side 2
life time 1000
SEMI STD
DISLOCATION DENSITY 500 max/ cm2
TTV/TAPER 12μm max
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-06-24meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]
2019-03-07meta-author