PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q: What is the highest temperature and the highest thermal shock that the wafers can withstand?
A: At the temperatures higher than 1000 C on the free surface of Si-face of 6H-SiC (0001) the carbon segregation properties are started so that during short time the thin [...]
2012-06-06meta-author
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
2018-06-19meta-author
Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]
2018-06-19meta-author
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
2018-06-19meta-author
Q:In the test report of blue LED wafers,it shows Vf and IV (mcd). How is this mcd being measured without actually processing the wafer into devices?
A:We use prober equipment and contact positive and negative pole, connect current, and then get the voltage and IV.
2018-06-19meta-author