Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm?
A: Sure, no problem
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm?
A: Sure, no problem
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q: Is it possible to use 4” non-patterned sapphire for fabrication? A:Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2″ size.
Q:In your web site, the picture of the SiC wafer does not look like regular, transparent-light green color SiC wafer. Why is that? A: Good question, the picture in website is Polarized light image.In regular, it is green color or grey color.
Q: For GaN on sapphire, could you please let us know which side is epi-ready? A: Ga-face,epi-ready and N face is connecting to sapphire.
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