PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
Undoped InP Wafer
PAM-XIAMEN offer low doped InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
[...]
2020-03-18meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[211] ±0.1°
4″
275
P/P
FZ >3,000
SEMI Prime, TTV<2μm
Intrinsic Si:-
[111] ±0.5°
4″
500
P/P
FZ >25,000
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
525
P/E
4-6
SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF
p-type Si:B
[110]
4″
525
P/E
2-10
PF<111> SF 109.5°
p-type Si:B
[100]
4″
300
P/E
800-5,400
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
10-20
SEMI Prime
p-type Si:B
[100]
4″
3000
P/E/P
10-15
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
250
P/E
8-12
SEMI Prime
p-type Si:B
[100]
4″
275
P/P
7-14
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
300
P/E
7-14
SEMI Prime, TTV<5μm
p-type [...]
2019-03-05meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] [...]
2019-02-22meta-author
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
2019-05-08meta-author