Will cell phone windows come to the rescue?
Will cell phone windows come to the rescue?
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow: 1. Specifications of GaAs Epiwafer with AlGaAs Multilayers VCSEL, 980nm, GaAs epiwafer, 4″size PAM210208 Layer No. Material Group Repeat Mole Fraction(x) Strain(ppm) PL(nm) Thickness(nm) Dopant 32 GaAs – – – – – 156 C 31 Al(x)GaAs – – 0.04 – – 50.5 C 30 Al(x)GaAs – – 0.87->0.04 – – 20 C 29 Al(x)GaAs – – 0.87 – – 59.7 C 28 Al(x)GaAs – 16 0.04->0.87 – – 20 C 27 Al(x)GaAs – 0.04 – – 51.5 C 26 Al(x)GaAs – 0.87->0.04 – – 20 C 25 Al(x)GaAs – 0.87 – – 59.7 C 24 Al(x)GaAs – – 0.04->0.87 – – 20 C 23 Al(x)GaAs – – 0.04 – – 32.9 C 22 Al(x)GaAs – – 0.80->0.04 – – 20 C 21 Al(x)GaAs – – 0.98 – – 20 C 20 Al(x)GaAs – – 0.8 – – 61.6 C 19 GaAsP – – – – – – UD 18 In(x)GaAs – – – – 970nm – UD 17 GaAsP – – – – – – UD 16 In(x)GaAs – – – – 970nm – UD 15 GaAsP – – – – – – UD 14 In(x)GaAs – – – – 970nm – UD 13 GaAsP – – – – – – UD 12 Al(x)GaAs – – 0.87 – – 59.7 Si 11 Al(x)GaAs – – 0.04->0.87 – – 20 Si 10 Al(x)GaAs – – 0.04 – – 51.5 Si 9 Al(x)GaAs – – 0.87->0.04 – – 20 Si 8 Al(x)GaAs – 6 0.87 – – 59.7 Si 7 Al(x)GaAs – 0.04->0.87 – – 20 Si 6 Al(x)GaAs – 0.04 – – 51.5 Si 5 Al(x)GaAs – 30 0.92->0.04 – – 20 Si 4 Al(x)GaAs – 0.92 – – 59.8 Si 3 Al(x)GaAs – 0.04->0.92 – – 20 Si 2 Al(x)GaAs – 0.04 – – 51.5 Si 1 GaAs – – – – – 500 Si 4 inch GaAs substrate Si doped; [...]
PAM XIAMEN offers MoSe2 crystal. MoSe2 is a layered material with strong in-plane bonding and weak out-of-plane interactions. These interactions lead to exfoliation into two-dimensional layers of single unit cell thickness. In addition, MoSe2 have sizable bandgaps that change from indirect to direct in [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2434 p–type Si:B [110] ±0.25° 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst PAM2435 p–type Si:B [110] ±0.5° 4″ 380 P/P 1–30 SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst PAM2436 p–type Si:B [110] ±0.5° 4″ 750 P/E 1–100 SEMI Prime (back–side [...]
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
PAM-P02, the α series energy spectrum detectors are charged particles detector based on CZT crystal in super small size. They can be used in common environment and vacuum environment. For vacuum environment, they have an especially high energy resolution. The detector integrates CZT crystal, visible light [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our [...]
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