Structure for InGaAs photodetectors

Structure for InGaAs photodetectors

We offer the wafer structure InGaAs photodetectors as follows:

Material X Thickness (nm) Dopant Doping concentration
InP   1000 N (Sulfur) 3e16
In(x)GaAs 0.53 3000 U/D 5e14
InP   500 N (Sulfur) 3e16
Substrate     SI (Fe)  

Source:PAM-XIAMEN

For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.

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