PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-04meta-author
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
2019-04-22meta-author
PAM XIAMEN offers 6″CZ Prime Silicon Wafer-1
Item8, 25pcs
Silicon wafer:
i. Diameter: 150 mm ± 0.5 mm,
ii. Thickness: 675μm ±25μm
iii. Doping: P type
iv. Orientation: (111) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
[...]
2020-03-30meta-author
PAM XIAMEN offers SrLaAlO4 crystal.
SrLaAlO4 crystal is a promising substrate material for high Tc superconduct film and other oxide films to replace SrTiO3 crystal with better quality and lower cost. We produces SrLaAlO4 crystal and substrate in house up to 35 mm. We [...]
2019-05-14meta-author
Gallium nitride semiconductors
GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now.
Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]