3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
3-4. Step Bunching Step bunching is visible as a pattern of parallel lines running perpendicular to the major at. If present, estimate the % of speci ed area affected.
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
5-6-4 SiC High-Power Switching Devices The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
5-4-4-2 SiC Epitaxial Growth Polytype Control Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2-6.Wafer Primary Flat The flat of longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane; major flat. The primary at is the {10-10} plane with the at face parallel to the <11-20> direction.
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