Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author
PAM XIAMEN offers Ni -Polycrystalline Substrate & Foil & Foam.
tomic number: 28
Atomic number: 28
Atomic mass: 58.71 g.mol -1
Atomic mass: 58.71 g.mol -1
Crystal structure: F.C.C
Crystal structure: F.C.C
Lattice Constant: 0.325 nm
Lattice Constant: 0.325 nm
Ni -Polycrystalline Substrate & Foil & Foam
Ni Metallic Substrate ( polycrystalline): 1″ x 1″ x 1.0 mm, 1 side [...]
2019-05-13meta-author
PAM XIAMEN offers LD Bare Bar for 1550nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 1550nm
Filling Factor: 19%
Output Power: 25W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP
Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦10@≧0.3um
Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413)
For more information, [...]
2021-03-18meta-author
PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as [...]