PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.
Crystal
Structure /Lattice Constant(A)
MP oC
Density, g/cm3
Growth Tech
DyScO3
Orthorombic a=5.44 b=5.71 c=7.89
2127
6.9
CZ
GdScO3
Orthorombic a=5.45 b=5.75 c=7.93
2127
6.6
CZ
TbScO3
Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147
2127
6.6
CZ
DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3)
DyScO3 (110) 5x5x0.5mm 1sp”
DyScO3 (110) 5x5x0.5mm 2sp
DyScO3 (110) 10x10x0.5mm 1sp
DyScO3 (110) 10x10x0.5mm 2sp
DyScO3 (001) 10x10x0.5mm 1sp [...]
2019-05-20meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author
Hyung Koun Cho∗
Department of Metallurgical Engineering, Dong-A University, Busan 604-714
Jeong Yong Lee
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology, Daejon 305-701
We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]
2021-12-22meta-author
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 80%
Output Power: 600W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author