Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

  • Home
  • News
  • Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of current–voltage characteristics in terms of classical thermionic emission theory it is shown that the proposed simulation model of Schottky diode corresponds to the almost “ideal” diode with ideality factor n equals 1.1. Because of this it is determined that the effective Schottky barrier height phivB equals 1.57 eV and 1.17 eV for Ni/6H and Ti/4H silicon carbide Schottky diode type, respectively.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] or [email protected]

2018-04-19

Share this post

Related Posts

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs, n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI [...]

2019-03-06meta-author
Near-band-edge luminescence in heavily doped gallium arsenide

Near-band-edge luminescence in heavily doped gallium arsenide The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]

2018-08-28meta-author
60+1mm FZ Si Ingot -1

PAM XIAMEN offers 60+1mm FZ Si Ingot -1 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]  

2020-03-10meta-author
Portable Diagnostic Spectrum Analyzer

PSA-01 is a portable nuclear spectrum acquisition instrument, which integrates main amplifier，multi-channel pulse analyzer and high-voltage. Its gain, high-voltage and shaping time are adjustable. With upper computer software, it can acquit nuclear spectrum, analyzing, processing and storage data. Its built-in Li-battery could charge more [...]

2019-04-25meta-author
GaN Epitaxy Template on Sapphire

GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]

2019-04-22meta-author
2″ Silicon Wafer-11

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] 2″ 2000 P/P 1-10 1 F @ <1,-1,0> p-type Si:B [110] 2″ 350 P/E 0.1-1.0 PF<111> SF 109.5° p-type Si:B [110] 2″ 280 P/P 0.080-0.085 PF<111> SF 109.5° p-type Si:B [100] 2″ 500 P/P 1,300-8,000 SEMI Prime p-type Si:B [100] 2″ 500 P/P 1,300-2,600 SEMI Prime p-type Si:B [100] 2″ 250 P/P FZ 510-1,200 SEMI Prime p-type Si:B [100] 2″ 300 P/P ~150 SEMI Prime p-type Si:B [100] 2″ 300 P/P 90-120 SEMI Prime p-type Si:B [100] 2″ 300 P/P 70-80 SEMI Prime p-type Si:B [100] 2″ 1400 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 1500 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 6-8 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 3000 P/E 4.9-5.3 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 300 P/E 1-10 SEMI Prime p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime p-type Si:B [100] 2″ 500 P/E 1-2 SEMI [...]

2019-03-07meta-author