PAM XIAMEN offers NaCl single crystal substrates.
NaCl single crystal substrates is ideal for growing expitaxial film and studying interface diffusion and defects. The film is easily removed from NaCl substrate by floating it off on water or by dissolving away the underlying substrate. [...]
PAM-XIAMEN has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems.
The GaAs-pHEMT is widely used for high [...]
GaAs is a typical III-V direct bandgap semiconductor material with excellent optoelectronic properties and high mobility, making it suitable for the production of high-speed RF devices. GaAs can also form quantum well structures with GaAlAs, further improving the performance of light-emitting devices (low threshold [...]
PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of Czochralski grown silicon.
Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications.
FZ Si [...]
5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
SWIR (short wave infrared) detector is widely used in aerospace remote sensing, low-light night vision, medical diagnosis, agricultural industry, security monitoring and other fields. The short-wave infrared InGaAs detector has the characteristics of high detection rate, high uniformity and high stability, and is one [...]