Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

  • Home
  • News
  • Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of current–voltage characteristics in terms of classical thermionic emission theory it is shown that the proposed simulation model of Schottky diode corresponds to the almost “ideal” diode with ideality factor n equals 1.1. Because of this it is determined that the effective Schottky barrier height phivB equals 1.57 eV and 1.17 eV for Ni/6H and Ti/4H silicon carbide Schottky diode type, respectively.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

2018-04-19

Share this post

Related Posts

Low Temperature GaAs Test Report

Low Temperature GaAs Test Report https://www.powerwaywafer.com/low-temperature-gaas-2.html For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]

2019-03-20meta-author
2″ Silicon Wafer-10

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]

2019-03-07meta-author
PAM XIAMEN Offers GaAsP wafer,size from 2”to 3”

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our [...]

2017-06-15meta-author
LASRALO4 STRONTIUM LANTHANUM ALUMINATE CRYSTAL SUBSTRATES

PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.                                            Main Parameters Crystal structure M4 Growth method Czochralski method Unit cell constant a=3.756Å   c=12.63 Å Melt point（℃） 1650 Density 5.92（g/cm3） Hardness 6-6.5（mohs） Dielectric constants ε=16.8 Size 10×3，10×5，10×10，15×15，20×15，20×20 Ф15, Ф20，Ф1″，Ф2″, Ф2.6″ Thickness 0.5mm, 1.0mm Polishing Single or [...]

2019-03-13meta-author
Cleaving Silicon Wafers

PAM XIAMEN offers Cleaving Silicon Wafers. Cleaving (100) silicon wafers Cleaving (111) silicon wafers For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops [...]

2019-02-22meta-author
Solar Silicon Wafers

Solar Silicon Wafers PAM XIAMEN offers Solar Silicon Wafers. Limiting Efficiency It has been well established that the limiting efficiency of single crystals falls at about 29% [Swanson] this limit was established in the seminal work by Tiedje. In figure 1 we can see this limiting efficiency [...]

2019-02-14meta-author