PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
SEMI TESt
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 10,000-12,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±0.5°
3″
415 ±15
BROKEN
FZ 10,000-12,000
Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P
[111] ±0.5°
3″
2500
C/C
FZ 7,000-13,000
SEMI, Individual cst
n-type Si:P
[111] ±0.5°
3″
370
P/E
FZ >5,000
SEMI [...]
2019-03-06meta-author
Near-band-edge luminescence in heavily doped gallium arsenide
The near-band-edge photoluminescence at 80K of heavily tellurium-doped degenerate liquid-phase-epitaxial gallium arsenide layers (n=2*1018 cm-3) is investigated. The layers are compensated with shallow germanium acceptors (the values of the degree of compensation are K=0.05-0.7) during the epitaxial growth process. [...]
2018-08-28meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-03-10meta-author
PSA-01 is a portable nuclear spectrum acquisition instrument, which integrates main amplifier,multi-channel pulse analyzer and high-voltage. Its gain, high-voltage and shaping time are adjustable. With upper computer software, it can acquit nuclear spectrum, analyzing, processing and storage data. Its built-in Li-battery could charge more [...]
2019-04-25meta-author
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
2019-04-22meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110]
2″
2000
P/P
1-10
1 F @ <1,-1,0>
p-type Si:B
[110]
2″
350
P/E
0.1-1.0
PF<111> SF 109.5°
p-type Si:B
[110]
2″
280
P/P
0.080-0.085
PF<111> SF 109.5°
p-type Si:B
[100]
2″
500
P/P
1,300-8,000
SEMI Prime
p-type Si:B
[100]
2″
500
P/P
1,300-2,600
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
FZ 510-1,200
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
~150
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
90-120
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
70-80
SEMI Prime
p-type Si:B
[100]
2″
1400
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
1500
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
6-8
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
3000
P/E
4.9-5.3
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
300
P/E
1-10
SEMI Prime
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime
p-type Si:B
[100]
2″
500
P/E
1-2
SEMI [...]
2019-03-07meta-author