(100) Oriented Silicon Wafers-1

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2797 p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2798 p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst
PAM2799 p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E FZ >2,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2800 p-type Si:B [100] 4″ 420 C/C FZ 850-900 SEMI Prime, 2Flats, Empak cst
PAM2801 p-type Si:B [100] 4″ 200 ±10 P/P FZ 100-120 SEMI Prime, 1Flat, Empak cst
PAM2802 p-type Si:B [100] 4″ 250 P/P FZ 1-3 {0.97-1.01} SEMI Prime, 2Flats, Empak cst, MCC Lifetime>1,000μs.
PAM2803 p-type Si:B [100-6.0° towards[111]] ±0.5° 4″ 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
PAM2804 n-type Si:P [100] 4″ 400 ±10 P/P FZ 6,000-8,000 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2805 n-type Si:P [100] 4″ 200 ±10 P/P FZ >5,000 SEMI TEST (Scratches & defects on back-side), 1Flat, Ox<1E16/cc, C<1E16/cc, Lifetime>1,050μs, Empak cst
PAM2806 n-type Si:P [100] 4″ 380 P/E FZ 5,000-10,000 SEMI Prime, 1Flat, Lifetime>1,000μs, in Empak cassettes of 2 wafers
PAM2807 n-type Si:P [100] 4″ 425 C/C FZ >5,000 2Flats (p-type flats on n-type wafers), Empak cst
PAM2808 n-type Si:P [100-1.5° towards[110]] ±0.5° 4″ 525 P/E FZ >5,000 SEMI Prime, 2Flats, Lifetime>980μs, in Empak
PAM2809 n-type Si:P [100] 4″ 500 G/G FZ 4,300-6,300 SEMI, 2Flats, Lifetime>1,000μs, Both sides Ground, Empak cst
PAM2810 n-type Si:P [100] 4″ 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, 1Flat, in Empak cassettes of 6, 7 & 7 wafers
PAM2811 n-type Si:P [100] ±0.2° 4″ 380 ±10 P/E FZ >3,500 SEMI TEST (in opened Empak cst), 1 Flat
PAM2812 n-type Si:P [100] 4″ 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, 2Flats, TTV<5μm
PAM2813 n-type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, 1Flat, Empak cst, MCC Lifetime > 1,000μs,
PAM2814 n-type Si:P [100] 4″ 400 P/E FZ 2,000-6,500 SEMI Prime, 2Flats, Empak cst, Lifetime>1,000μs
PAM2815 n-type Si:P [100] 4″ 400 P/E FZ 2,000-6,500 SEMI, 2Flats, Empak cst
PAM2816 n-type Si:P [100] 4″ 915 ±10 E/E FZ 2,000-3,000 1Flat at [100], Empak cst
PAM2817 n-type Si:P [100] 4″ 300 L/L FZ 1,100-1,600 SEMI, 1Flat, Empak cst
PAM2818 n-type Si:P [100] ±1° 4″ 200 ±10 P/P FZ >1,000 SEMI Prime, 1Flat, TTV<1μm, in Empak cst
PAM2819 n-type Si:P [100] 4″ 200 ±10 BROKEN FZ 800-1,500 Broken P/E wafers, in various size pieces, Lifetime >1,000μs
PAM2820 n-type Si:P [100] 4″ 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
PAM2821 n-type Si:P [100] 4″ 300 L/L FZ 800-1,500 SEMI, 1Flat, Empak cst
PAM2822 n-type Si:P [100] 4″ 500 P/P FZ 400-1,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2823 n-type Si:P [100] 4″ 500 P/P FZ 198-200 SEMI Prime, 1Flat, Empak cst
PAM2824 n-type Si:P [100] 4″ 500 P/P FZ 50-70 SEMI Prime, 1Flat, Empak cst
PAM2825 n-type Si:P [100] 4″ 570 ±10 E/E FZ 50-70 SEMI Prime, 1Flat, Empak cst, lifetime>1,200μs.
PAM2826 n-type Si:P [100] 4″ 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
PAM2827 n-type Si:P [100] 4″ 300 P/P FZ 1.2-2.0 SEMI Prime, 2Flats, MCC Lifetime (370-420)μs, Empak cst
PAM2828 n-type Si:P [100-6°] ±0.5° 4″ 350 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst
PAM2829 n-type Si:P [100] 4″ 525 P/P FZ 1-5 SEMI Prime, 2Flats, Empak cst
PAM2830 n-type Si:P [100-4° towards[111]] ±0.5° 4″ 525 P/E FZ 1-10 {3.2-4.0} SEMI Prime, 2Flats, Lifetime: ~500μs, in Empak cassettes of 5 wafers
PAM2831 Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<1μm
PAM2832 Intrinsic Si:- [100] 4″ 500 P/P FZ >30,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2833 Intrinsic Si:- [100] 4″ 350 P/P FZ >20,000 Prime, 1Flat, Empak cst, TTV<5μm
PAM2834 Intrinsic Si:- [100] 4″ 400 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst
PAM2835 Intrinsic Si:- [100] 4″ 500 P/P FZ >20,000 SEMI Test, 1Flat, Empak cst, TTV<3μm, Scratches on both sides
PAM2836 Intrinsic Si:- [100] 4″ 500 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<2μm
PAM2837 Intrinsic Si:- [100] 4″ 525 P/P FZ >20,000 SEMI Prime, 1Flat, Empak cst, Super Low TTV<0.3μm over entire wafer
PAM2838 Intrinsic Si:- [100] 4″ 525 P/E FZ >20,000 SEMI Prime, 1Flat, Empak cst, TTV<5μm
PAM2839 Intrinsic Si:- [100] 4″ 1000 P/P FZ >20,000 Prime, 1Flat, Empak cst
PAM2840 Intrinsic Si:- [100] 4″ 1000 P/P FZ >20,000 Prime, 1Flat, Empak cst

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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