DyScO3/GdScO3//TbScO3 crystal

PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.

Crystal	Structure /Lattice Constant(A)	MP ^oC	Density, g/cm³	Growth Tech
DyScO3	Orthorombic a=5.44 b=5.71 c=7.89	2127	6.9	CZ
GdScO3	Orthorombic a=5.45 b=5.75 c=7.93	2127	6.6	CZ
TbScO3	Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147	2127	6.6	CZ

DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3)

DyScO3 (110) 5x5x0.5mm 1sp”

DyScO3 (110) 5x5x0.5mm 2sp

DyScO3 (110) 10x10x0.5mm 1sp

DyScO3 (110) 10x10x0.5mm 2sp

DyScO3 (001) 10x10x0.5mm 1sp

DyScO3 (001) 10x10x0.5mm 2sp

DyScO3 (001) 5x5x0.5mm 1sp

GdScO3

GdScO3 (110) 5x5x0.5mm 1sp

GdScO3 (110) 5x5x0.5mm 2sp

GdScO3 (110) 10x10x0.5mm 2sp

GdScO3 (110) 10x10x0.5mm 1sp

GdScO3 (001) 10x10x0.5mm 1sp

TbScO3

TbScO3 (110) 10x10x0.5mm 1sp

TbScO3 (110) 5x5x0.5mm 1sp

TbScO3 (110) 5x5x0.5mm 2sp

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2019-05-20

PbSe single crystal substrate – Can’t Offer Temporarily

PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]

2019-05-14meta-author

Low Temperature Grown InGaAs (LT-InGaAs)

PAM-XIAMEN offers low temperature grown InGaAs (LT-InGaAs) on GaAs Substrate for InGaAs Photo Conductive antenna substrate for THz, excitation wavelength will be 1030 nm. Low-temperature-grown In0.53Ga0.47As on GaAs is grown at low temperature using gaseous molecular beam epitaxy technology, and the effects of different growth temperatures and arsine pressures [...]

2020-09-16meta-author

Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]

2015-12-18meta-author GaAs epitaxy

Triple-Junction Solar Cells

We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more [...]

2015-01-07meta-author triple junction solar c, triple junction solar cells for sale

4″ Silicon Wafer-16

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° [...]

2019-03-06meta-author

single crystal LiTaO3

PAM XIAMEN offers single crystal LiTaO3. LiTaO3 X-cut LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp LiTaO3, 4″ wafer, specific parameters as follows: 4″ LT Wafer Specification Diameter 100.0±0.5mm Orientation Flat (OF) 30±2mm Second Refer. Flat [...]

2019-05-08meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

DyScO3/GdScO3//TbScO3 crystal

DyScO3/GdScO3//TbScO3 crystal

Share this post

Related Posts

PbSe single crystal substrate – Can’t Offer Temporarily

Low Temperature Grown InGaAs (LT-InGaAs)

Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Triple-Junction Solar Cells

4″ Silicon Wafer-16

single crystal LiTaO3

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers