DyScO3/GdScO3//TbScO3 crystal

PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.

Crystal	Structure /Lattice Constant(A)	MP ^oC	Density, g/cm³	Growth Tech
DyScO3	Orthorombic a=5.44 b=5.71 c=7.89	2127	6.9	CZ
GdScO3	Orthorombic a=5.45 b=5.75 c=7.93	2127	6.6	CZ
TbScO3	Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147	2127	6.6	CZ

DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3)

DyScO3 (110) 5x5x0.5mm 1sp”

DyScO3 (110) 5x5x0.5mm 2sp

DyScO3 (110) 10x10x0.5mm 1sp

DyScO3 (110) 10x10x0.5mm 2sp

DyScO3 (001) 10x10x0.5mm 1sp

DyScO3 (001) 10x10x0.5mm 2sp

DyScO3 (001) 5x5x0.5mm 1sp

GdScO3

GdScO3 (110) 5x5x0.5mm 1sp

GdScO3 (110) 5x5x0.5mm 2sp

GdScO3 (110) 10x10x0.5mm 2sp

GdScO3 (110) 10x10x0.5mm 1sp

GdScO3 (001) 10x10x0.5mm 1sp

TbScO3

TbScO3 (110) 10x10x0.5mm 1sp

TbScO3 (110) 5x5x0.5mm 1sp

TbScO3 (110) 5x5x0.5mm 2sp

For more information, please contact us email at [email protected] and [email protected]

2019-05-20

M Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-17meta-author

Pyrolytic Boron Nitride

PAM XIAMEN offers Pyrolytic Boron Nitride. Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production. Good [...]

2019-05-14meta-author

Silicon Vacancy (Vsi) — Spin Color Center in Silicon Carbide

Solid-state spin color center is an important research platform for quantum information processing, and diamond nitrogen vacancy (NV) color center is its outstanding representative. Since the detection of a single diamond NV color center at room temperature was reported by a German research team [...]

2022-06-14meta-author

Metallized Diamond Heat Sink

PAM-XIAMEN can offer metallized diamond heat sink for solving the poor bonding force between diamond and the matrix and the early falls of the diamond due to high interface energy with most metals, ceramics, etc. A metallized diamond heat sink compound refers to plating metal on [...]

2021-06-11meta-author

4″ FZ Prime Silicon Wafer

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer. 4”FZ P-type orientation 111 thickness 400±15 Resistivity 15000Ωcm polished side 1 Acid etched side 2 life time 1000 SEMI STD DISLOCATION DENSITY 500 max/ cm2 TTV/TAPER 12μm max For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-06-24meta-author

GaInP/InP epi wafer

GaInP/InP epi wafer We can offer 2″ GaInP/InP epi wafer as follows: 2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um, InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished. Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is [...]

2014-11-11meta-author ga, gainp band gap, gainp refractive index, GaInP/InP epi wafer

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

DyScO3/GdScO3//TbScO3 crystal

DyScO3/GdScO3//TbScO3 crystal

Share this post

Related Posts

M Plane U-GaN Freestanding GaN Substrate

Pyrolytic Boron Nitride

Silicon Vacancy (Vsi) — Spin Color Center in Silicon Carbide

Metallized Diamond Heat Sink

4″ FZ Prime Silicon Wafer

GaInP/InP epi wafer

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers