PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
PAM-XIAMEN can offer 6 inch N-type GaAs wafer. Gallium arsenide is a second-generation semiconductor material with excellent performance. Gallium arsenide belongs to the second-generation semiconductors, which has far superior frequency, power and withstand voltage performance than the first-generation silicon semiconductors. According to different resistance, GaAs [...]
2021-04-20meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
With the continuous evolution of optical telecommunication and opto-electronics device applications towards high speed and high performance, we are closely following market demand in photonics epitaxial wafers for high-speed and high-end optoelectronic applications. PAM-XIAMEN can provide a series of compound semiconductor based photonics epitaxial wafers, which can be [...]
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SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
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