Properties of InGaN blue laser diodes grown on bulk GaN substrates

Properties of InGaN blue laser diodes grown on bulk GaN substrates

High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, they can become a technological platform for the realization of high-quality violet and near-UV laser diodes. We used MOVPE technique to deposit InGaN/AlGaN/GaN layers forming a separate confinement heterostructure laser diode. These devices are characterized by a low density of dislocations (∼10⁵ cm⁻²) and a high optical output power of 1.9 W, measured in short pulses (30 ns) to prevent the structure from overheating. We will briefly discuss the challenges we face during the process of optimization of these devices.

Source: Journal of Crystal Growth

If you need more information about Properties of InGaN blue laser diodes grown on bulk GaN substrates，please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or [email protected].

2013-03-06 GaN substrate

Related Posts

Silicon Vacancy (Vsi) — Spin Color Center in Silicon Carbide

Solid-state spin color center is an important research platform for quantum information processing, and diamond nitrogen vacancy (NV) color center is its outstanding representative. Since the detection of a single diamond NV color center at room temperature was reported by a German research team [...]

2022-06-14meta-author

Advanced Characterisation of Silicon Wafer Solar Cells

Abstract Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]

2014-09-23meta-author sili, Silicon Wafer, silicon wafer thickness, silicon wafer uk

2″ silicon wafers Thickness:1000 ±25μm

PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm. 2’’ silicon wafers Ra < 4 nm (100) Thickness1000 ±25μm Doped (no requirement for resistivity and type, resistivity and type will be shown on test report when shipment) 2 sides polished With flat (SEMI STD) For [...]

2019-08-22meta-author

Cu – Substrates ( single crystal) & Polycrystalline & Foam

PAM XIAMEN offers Cu – single crystal Substrates & Polycrystalline & Copper Foam. 1. General Properties for Single Crystal Copper Symbol : Cu Atomic Number: 29 Atomic Weight: 63.546(3 Crystal structure: FCC -Face centered cubic Density: 8.96 g/cm3 Melting Point: 1357.77 K (1084.62 °C, 1984.32 °F) [...]

2019-05-08meta-author

Analog Multi-channel Analyzer

AMCA-01 is an analog multi-channel equipment which used for energy spectrum analyze for variety of radiations detectors. Added with upper computer software, it can collect analog energy spectral signal, drawing energy spectrum and analyzing it, and counting full energy peak resolution. The software also [...]

2019-04-25meta-author

3″ Silicon Wafer-5

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst p-type Si:B [100] 3″ 300 P/P 0.5-10.0 SEMI Prime, TTV<2μm, Empak cst p-type Si:B [100] 3″ 315 P/P 0.5-10.0 SEMI Prime, TTV<3μm p-type Si:B [100] 3″ 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly) p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers p-type Si:B [100] 3″ 250 BROKEN 0.15-0.20 Broken wafers, in Epak cst p-type Si:B [100] 3″ 356 P/P 0.015-0.020 SEMI p-type Si:B [100-4° towards[110]] ±0.5° 3″ 230 P/E 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 3″ 300 P/E 0.01-0.02 SEMI Prime p-type [...]

2019-03-06meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.