Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs and other related products and services announced the new availability of size 2”-3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are [...]
2017-08-30meta-author
PAM XIAMEN offers YSZ crystal.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ substrates (111)
YSZ (111) 5x5x0.5mm, 1SP”
YSZ (111) 10x10x0.5mm, [...]
2019-05-21meta-author
A Glance of GaAs Wafer Market
According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for [...]
2018-09-05meta-author
4H N Type SiC
High quality single crystal SiC wafer are available for the electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with unique electrical properties and excellent thermal properties. Compared with silicon wafer and GaAs wafer, SiC wafer is more suitable [...]
2018-08-07meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
37
p- Si:B
35±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
16.5
n- Si:P
12.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
13±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7±1
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
14.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
p- Si:B
80.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
n- Si:P
27±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
105
p- Si:B
0.0035±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
26
n- Si:P
5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10.15
n- Si:P
3.8±0.5
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
6.8±0.8
n- Si:P
0.55±0.15
N/N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
16.5
n- Si:P
35 ±10%
N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
19±1.3
n- Si:P
25±5
N/N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
54.5±3.6
n- Si:P
4.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
20
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
20
n- Si:P
0.09 ±10%
N/N+
4″Øx400μm
n- [...]
2019-03-08meta-author
GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH
After more than four years of often turbulent negotiations to expand the Information Technology Agreement (ITA), tariffs on roughly $1.3 trillion in trade in tech products finally start marching to zero today. [...]
2016-07-29meta-author
