Bulk GaN Crystal Grown by HVPE
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
2012-10-16meta-author
PAM XIAMEN offers 6″ Silicon Wafer-5 as follows, while silicon wafer list includes, but not limited to the following.
150mm wafers
Orientation100,
SSP,
Flat Semi Std
Thickness 530+/-15um
Doping N/A (no requirement)
1um thermal oxide
For more polished wafer specification, please see below link:
https://www.powerwaywafer.com/silicon-wafer
For 6″ Silicon Wafer-5 please see below link:
link 1.6″ [...]
2019-11-26meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8
Item5, 125pcs
Silicon wafer:
i. Diameter:100 mm ± 0.5 mm,
ii. Thickness: 525μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: [...]
2020-03-27meta-author
The Silicon crystal orientations that we often hear are <100>, <110> and <111>(shown as Fig. 1), respectively indicating a crystallographic family. The single crystal silicon structure belongs to cubic crystals, and the <100> crystal orientation family represents six crystal orientations: [100], [010], [001], [100], [0-10], and [...]
2024-02-23meta-author
PAM XIAMEN offers Quartz Frit.
1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc
Specifications
Diameter – mm
25
Thickness – mm
4
Porosity
15~40um or 4~15um (Please select the pore size in the optional bar)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-04-18meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author