Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ [...]
The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure:
1. GaAs HEMT Epitaxial Wafer Structures
Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT):
HEMT [...]
PAM-XIAMEN, one of LED wafer manufacturers, offers GaN Wafer for Fabricating LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission:
1. Specification of GaN Wafer for LED Devices
No1. PAM200614-GAN-LED
size : 2 inch
WD : 455 ± 10nm
[...]
2020-06-02meta-author
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers for 650V power switching device fabrication.
Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on [...]
2019-02-11meta-author
PAM-XIAMEN is a reliable supplier of semiconductor materials, offering element semiconductor wafers, wide or narrow bandgap semiconductor wafers to research institutes, universities, and related enterprise. More wafer specifications please see https://www.powerwaywafer.com/products.html.
PAM-XIAMEN has compiled top 20 publications in Condensed Matter Physics & Semiconductors in [...]
2022-08-29meta-author