GaAs HEMT epi wafer

GaAs HEMT epi wafer

We can offer 4″GaAs HEMT epi wafer, please see below typical structure:

Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT):

HEMT structure Thickness
GaAs cap layer 100A
AlGaAs, x=0.28,barrier layer, Si doped 7E17 500A
AlGaAs, x=0.28,spacer layer 150A
GaAs 0.5um
AlxGaAs/GaAs, x=0.28, SL 30A/30A, 10 period
GaAs buffer 2000A
GaAs substrate



300K,Mobility :> 5000cm2/V.s, Ns>4.0E11 
77K, Mobility: > 150,000-190,000 cm2/V.s,Ns>4.0E11

Structure 2: GaAs MBE epiwafers

1) 4″ SI substrate GaAs with [100] orientation,
2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
10/3 nm, repeat 170 times,
3) barrier Al(0.3)Ga(0.7)As 400 nm,
4) quantum well GaAs 20 nm,
5) spacer Al(0.3)Ga(0.7)As 15 nm,
6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
7) barrier Al(0.3)Ga(0.7)As 180 nm,
8) cap layer GaAs 15nm.


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