GaAs HEMT epi wafer
We can offer 4″GaAs HEMT epi wafer, please see below typical structure:
Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT):
| HEMT structure | Thickness |
| GaAs cap layer | 100A |
| AlGaAs, x=0.28,barrier layer, Si doped 7E17 | 500A |
| AlGaAs, x=0.28,spacer layer | 150A |
| GaAs | 0.5um |
| AlxGaAs/GaAs, x=0.28, SL | 30A/30A, 10 period |
| GaAs buffer | 2000A |
| GaAs substrate | — |
300K，Mobility :> 5000cm2/V.s, Ns>4.0E11
77K, Mobility: > 150,000-190,000 cm2/V.s,Ns>4.0E11
Structure 2: GaAs MBE epiwafers
1) 4″ SI substrate GaAs with [100] orientation,
2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
10/3 nm, repeat 170 times,
3) barrier Al(0.3)Ga(0.7)As 400 nm,
4) quantum well GaAs 20 nm,
5) spacer Al(0.3)Ga(0.7)As 15 nm,
6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
7) barrier Al(0.3)Ga(0.7)As 180 nm,
8) cap layer GaAs 15nm.
Source: PAM-XIAMEN
If you need more information about GaAs HEMT epi wafer,please send us email: victorchan@powerwaywafer.com or powerwaymaterial@gmail.com