Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html.
Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with [...]
2024-04-22meta-author
PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping
4″ CZ crystal Si wafer
N type doped P
Orientation<111>
Resistivity 12-15Ωcm
Thickness 205-220μm
Prime Flat32.5±2.5mm
no need for DSP, just double side lapping
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06meta-author
PAM-PA04 series detectors are high density pixel array detector based on CZT crystal. they can counting high-dose X-ray and imaging.
1. CZT High-Density Pixel Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
>10.0×10.0mm2
Thickness
>0.7mm
Pixel size
<70um
Single Pixel leakage current
<0.01nA@100V
The maximum counting rate of linear region
>100Mcps/mm2
Electrode material
Au
Operation temperature
20℃~40℃
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Details
2. Features of CZT Pixel Detector [...]
2019-04-24meta-author
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less [...]