IV Test Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1mm.
6” Silicon wafer
Wafer Size : 6 inch Silicon
Thickness : 1mm
One side polishing
Axial direction : <100>
Type : P
resistivity:1-100Ωcm
no requirement for Particle
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-01meta-author
We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness [...]
2019-07-29meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (110)
BaTiO3 (110) 5x5x0.5 mm, 1SP, Substrate grade(with domains)
BaTiO3 (110) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (110) 10 x 10 x0.5 mm, 1SP, Substrate grade (with domains)
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-17meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment.
PAM-01A1 integrated custxomized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into exponential decay [...]
2019-04-24meta-author