Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
Highlights
•Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme.
•InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template.
•Overgrown [...]
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 mm Length
Ta [...]
2019-05-10meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
500
P/P
1-100
SEMI Prime, TTV<1μm, With Lasermark
n-type Si:P
[100-4°]
4″
525
P/E/P
1-10
SEMI Prime
n-type Si:P
[100]
4″
600
P/P
1-100
SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm
n-type Si:P
[100]
4″
1000
P/P
1-20
SEMI Prime
n-type Si:P
[100]
4″
2500
P/P
1-100
SEMI Prime, Individual cst
n-type Si:Sb
[100]
4″
450
P/E
~0.03
SEMI Prime
n-type Si:Sb
[100]
4″
400
P/E
~0.02
SEMI Prime
n-type Si:Sb
[100] ±0.2°
4″
250
P/P
0.01-0.05
SEMI Prime
n-type Si:Sb
[100]
4″
310 ±15
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
600
P/E
0.01-0.03
Strange Flats
n-type Si:Sb
[100-4°]
4″
1500
P/E/P
0.005-0.030
SEMI Prime
n-type Si:Sb
[100]
4″
1500
P/E/P
0.001-0.030
SEMI Prime
n-type Si:P
[111]
4″
1500
P/E
>20
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI [...]
2019-03-06meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at [email protected] and [email protected]
2020-06-12meta-author
PAM XIAMEN offers 3″LiNbO3 single crystal thin film
LiNbO3 single crystal thin film (X,Y,Z), X-cut 10μm; Substrate: 3″ Si 0.5 0.4mm;(PAM-P20412-LNOI )
Structure:Top layer: LiNbO3 single crystal thin film X-cut 10 μm
Substrate: 3″ Si 0.4mm, Resistivity >10,000Ωcm
Surface Roughness<0.5nm
TTV (Thickness Uniformity) <1.2μm, 17 [...]
2020-03-24meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author