PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
CZ
-100
1-20
4900-5100
P/E
PRIME
50.8
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-100
9900-10100
P/E
PRIME
50.8
N
Phos
FZ
-111
2k-5k
2000-5000
P/E
PRIME
50.8
N
Phos
CZ
-111
225-275
P/P
PRIME
50.8
N
Phos
CZ
-111
250-300
P/E
PRIME
50.8
N
Phos
FZ
-111
2000-5000
275-325
P/E
PRIME
50.8
N
Phos
CZ
-111
2900-3100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5950-6050
P/E
PRIME
50.8
N
Phos
FZ
-111
150-200
9900-10100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
50.8
N
Phos
CZ
-110
225-275
P/P
PRIME
50.8
N
Phos
CZ
-110
250-300
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.005-.02
275-325
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.001-.005
300-350
P/E
PRIME
50.8
P
Any
CZ
Any
Any
2400-2600
P/E
TEST
50.8
P
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
P
Boron
CZ
-100
1-20
10-30
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-02-27meta-author
PAM XIAMEN offers LD Bare Bar for 808nm@cavity 1.5mm.
Brand: PAM-XIAMEN
Wavelength: 808nm
Filling Factor: 50%
Output Power: 300W
Cavity Length:1.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM-XIAMEN can supply GaN wafers for LD, LED, HEMT and other applications. You can click following links for more GaN wafer specifications:
GaN based LED epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html;
GaN HEMT epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html;
Blue GaN LD wafer: https://www.powerwaywafer.com/blue-gan-ld-wafer.html.
Why you need to choose GaN wafers for power devices?
The short video: https://youtu.be/5Uk9HVzQWAc [...]
2022-09-26meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
5 x 5 [...]
2019-05-15meta-author
PAM XIAMEN offers 1654nm laser diode wafers.
Available Center Wavelengths: 1640nm – 1670nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 8mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 10 pm/mA
Slope Efficiency (typical): 0.10 mW/mA
For more [...]
2019-03-13meta-author