PAM XIAMEN offers Ge epi-film on Si.
4” N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness
4” P-type Ge film on N-type Silicon Wafer, 0.5 um thickness
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-04-28meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
480
C/C
1-30
SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~1.0ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~0.2ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI [...]
2019-03-05meta-author
Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. [...]
2023-01-13meta-author
Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
2020-03-09meta-author
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]