PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.
No1. C [...]
2020-04-03meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
M-Plane (1-100)
Al2O3 – Sapphire Wafer, M plane, 5x5x0.5mm, 2 SP – ALM050505S2
Al2O3 – Sapphire Wafer, M plane, 5x5x0.5mm,1 SP – ALM050505S1
Al2O3 – Sapphire Wafer, M plane, <10-10> 10x10x0.5mm, 2SP – ALM101005S2″
Al2O3 – Sapphire Wafer, [...]
2019-04-16meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
Silicon Nitride Waveguide – Substrates and Services Provided
PAM XIAMEN offers Silicon Nitride Waveguide
Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides [...]
2019-02-12meta-author
PAM-XIAMEN can supply semiconductor wafers, more wafer specifications please refer to https://www.powerwaywafer.com/products.html. If necessary, we will offer PL (photoluminescence) spectroscopy for the semiconductor wafers.
1. What is PL?
About PL, it refers to the self-emission light produced by a material after being excited by light. When [...]
2022-08-09meta-author
Ternary compound semiconductor material InxGa1-xAs is a mixed solid solution formed by GaAs and InAs. It is a sphalerite structure and belongs to direct bandgap semiconductor. Its energy band changes with the change of alloy and can be used to make various photoelectric devices, [...]
2022-10-19meta-author